Tri-modal carrier for a semiconductive wafer
First Claim
1. A method of bonding and de-bonding a semiconductive wafer to a tri-modal carrier, the method comprises the steps of:
- providing a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface for said tri-modal carrier, wherein each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole;
placing said semiconductive wafer onto a planarized surface of said doped semiconductive substrate, wherein said planarized surface is formed by positive poles and negative poles of said plurality of EFG circuits and by exposed portions of said doped semiconductive substrate;
adhering said semiconductive wafer onto said doped semiconductive substrate by charging each of said plurality of EFG circuits through said capacitance charging interface;
adhering said semiconductive wafer onto said doped semiconductive substrate through intermolecular bonding between a flat surface of said semiconductive wafer and said planarized surface of said doped semiconductive substrate;
adhering said semiconductive wafer onto said doped semiconductive substrate by removing trapped gas particles between said semiconductive wafer and said doped semiconductive substrate; and
releasing said semiconductive wafer from said doped semiconductive substrate by discharging each of said plurality of EFG circuits through said capacitance charging interface.
1 Assignment
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Accused Products
Abstract
A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.
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Citations
6 Claims
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1. A method of bonding and de-bonding a semiconductive wafer to a tri-modal carrier, the method comprises the steps of:
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providing a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface for said tri-modal carrier, wherein each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole; placing said semiconductive wafer onto a planarized surface of said doped semiconductive substrate, wherein said planarized surface is formed by positive poles and negative poles of said plurality of EFG circuits and by exposed portions of said doped semiconductive substrate; adhering said semiconductive wafer onto said doped semiconductive substrate by charging each of said plurality of EFG circuits through said capacitance charging interface; adhering said semiconductive wafer onto said doped semiconductive substrate through intermolecular bonding between a flat surface of said semiconductive wafer and said planarized surface of said doped semiconductive substrate; adhering said semiconductive wafer onto said doped semiconductive substrate by removing trapped gas particles between said semiconductive wafer and said doped semiconductive substrate; and releasing said semiconductive wafer from said doped semiconductive substrate by discharging each of said plurality of EFG circuits through said capacitance charging interface. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification