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Tri-modal carrier for a semiconductive wafer

  • US 9,984,913 B2
  • Filed: 09/05/2017
  • Issued: 05/29/2018
  • Est. Priority Date: 11/11/2013
  • Status: Active Grant
First Claim
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1. A method of bonding and de-bonding a semiconductive wafer to a tri-modal carrier, the method comprises the steps of:

  • providing a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface for said tri-modal carrier, wherein each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole;

    placing said semiconductive wafer onto a planarized surface of said doped semiconductive substrate, wherein said planarized surface is formed by positive poles and negative poles of said plurality of EFG circuits and by exposed portions of said doped semiconductive substrate;

    adhering said semiconductive wafer onto said doped semiconductive substrate by charging each of said plurality of EFG circuits through said capacitance charging interface;

    adhering said semiconductive wafer onto said doped semiconductive substrate through intermolecular bonding between a flat surface of said semiconductive wafer and said planarized surface of said doped semiconductive substrate;

    adhering said semiconductive wafer onto said doped semiconductive substrate by removing trapped gas particles between said semiconductive wafer and said doped semiconductive substrate; and

    releasing said semiconductive wafer from said doped semiconductive substrate by discharging each of said plurality of EFG circuits through said capacitance charging interface.

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