Uniform dielectric recess depth during fin reveal

• US 9,984,935 B2
• Filed: 05/01/2017
• Issued: 05/29/2018
• Est. Priority Date: 10/30/2015
• Status: Expired due to Fees

• Current Assignee: Elpis Technologies Inc. (Wi-LAN Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Briggs, Benjamin D., Clevenger, Lawrence A., Rizzolo, Michael, Strane, Jay W.
• Primary Examiner(s): Bradford, Peter
• Application Number:
  US15/583,595
• Publication Number:
  US 20170236756A1
• Time in Patent Office: 393 Days
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311
• CPC Class Codes: H01L 21/31056 the removal being a selective chemical etching step, e.g. selective dry etching through a mask
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
• CPC Class Codes: H01L 21/76232 of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls H01L21/76229 takes precedence
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method for providing a uniform recess depth between different fin gap sizes includes depositing a dielectric material between fins on a substrate. Etch lag is tuned for etching the dielectric material between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth. An etch block is formed in the narrow gaps. The wider gaps are etched to the target depth. The etch block is removed.

Claims

1. A method for providing a uniform recess depth between different fin gap sizes, comprising:

tuning reactive ion etch lag for etching a dielectric material, between fins on a substrate, between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth; and

etching the dielectric material in the wider gaps to the target depth.

2. The method as recited in claim 1, wherein tuning the reactive ion etch lag includes altering a chemistry or a condition of a reactive ion etch.

3. The method as recited in claim 1, wherein the fins include a liner formed thereon and the dielectric material is etched relative to the liner.

4. The method as recited in claim 3, further comprising recessing the liner to the target depth.

5. The method as recited in claim 1, wherein the fins are etched from the substrate.

6. The method as recited in claim 1, wherein the fins include one or more of Si, SiGe, III-V materials or combinations thereof.

7. The method as recited in claim 1, further includes forming an etch block in the narrow gaps.

8. The method as recited in claim 7, further includes removing the etch block.

9. The method as recited in claim 7, wherein forming the etch block includes forming a capillary polymer selectively in the narrow gaps.

10. The method as recited in claim 9, further includes removing the etch block.