Light-emitting device

• US 9,985,074 B2
• Filed: 11/07/2016
• Issued: 05/29/2018
• Est. Priority Date: 05/13/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Yeh, Wen-Yung, Yu, Yu-Chen, Yen, Hsi-Hsuan, Lin, Jui-Ying
• Primary Examiner(s): Niu, Xinning
• Application Number:
  US15/330,884
• Publication Number:
  US 20170069680A1
• Time in Patent Office: 568 Days
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device is introduced herein. The light-emitting device comprises a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on a substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength, and wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip.

Claims

1. A light-emitting device comprising:

a substrate;

a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on the substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength;

wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip; and

wherein each of the first light-generating active layer and the second light-generating active layer comprises a p-type layer and an n-type layer, wherein the stacked first and second light-generating active layers are bonded to the substrate.

2. The light-emitting device of claim 1, wherein the first light-generating active layer and the second light-generating active layer are electrically connected in series.

3. The light-emitting device of claim 1, wherein the first light-generating active layer and the second light-generating active layer are electrically connected in parallel.

4. The light-emitting device of claim 1, further comprising a conductive connection layer interposed between the first light-generating active layer and the second light-generating active layer.

5. The light-emitting device of claim 4, wherein the conductive connection layer is pervious to light.

6. The light-emitting device of claim 4, wherein the first light-generating active layer and the second light-generating active layer are electrically connected in series by the conductive connection layer.

7. The light-emitting device of claim 1, wherein the first light-generating active layer and the second light-generating active layer are monolithically formed on the substrate.

8. The light-emitting device of claim 1, further comprising a plurality of electrodes electrically connected to the first light-generating active layer and the second light-generating active layer such that the first light-generating active layer and the second light-generating active layer are capable of being independently controlled.

9. The light-emitting device of claim 1, wherein the first light-generating active layer and the second light-generating active layer take turns to emit light during the positive and negative half cycles of alternating current.