Method for processing polysilicon thin film and method for fabricating thin film transistor
First Claim
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1. A method for processing a polysilicon thin film, comprising:
- etching the polysilicon thin film using etching particles,wherein an angle between an incident direction of the etching particles and the polysilicon thin film is larger than 0° and
less than 90°
;
wherein the etching the polysilicon thin film using etching particles comprises;
fixing a substrate having the polysilicon thin film formed thereon on a supporting platform placed in an electromagnetic resonant cavity;
tilting the supporting platform such that an angle between the tilted supporting platform and a horizontal plane is larger than 0° and
less than 90°
;
applying a negative bias to the supporting platform;
introducing an inert gas to the electromagnetic resonant cavity;
allowing the inert gas to form a plasma, wherein the plasma moves downwards; and
etching the polysilicon thin film using the plasma.
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Abstract
A method for processing a polysilicon thin film and a method for fabricating a thin film transistor are provided. The method for processing a polysilicon thin film includes: etching the polysilicon thin film using etching particles. An angle between an incident direction of the etching particles and the polysilicon thin film is larger than 0° and less than 90°.
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Citations
15 Claims
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1. A method for processing a polysilicon thin film, comprising:
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etching the polysilicon thin film using etching particles, wherein an angle between an incident direction of the etching particles and the polysilicon thin film is larger than 0° and
less than 90°
;wherein the etching the polysilicon thin film using etching particles comprises; fixing a substrate having the polysilicon thin film formed thereon on a supporting platform placed in an electromagnetic resonant cavity; tilting the supporting platform such that an angle between the tilted supporting platform and a horizontal plane is larger than 0° and
less than 90°
;applying a negative bias to the supporting platform; introducing an inert gas to the electromagnetic resonant cavity; allowing the inert gas to form a plasma, wherein the plasma moves downwards; and etching the polysilicon thin film using the plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification