Passivated contact formation using ion implantation
First Claim
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1. A method comprising, in order:
- by ion-implantation, implanting a first element as a first ion into a first region of a substrate at a first depth below a surface of the substrate;
by ion-implantation, implanting a second element as a second ion into a second region of the substrate at a second depth below the surface, the second depth being between the surface and the first depth; and
annealing the substrate, wherein;
the substrate comprises a semiconductor,the first ion is different from the second ion,the annealing converts the second region to a second layer comprising the second element and the semiconductor,the annealing converts the first region to a first layer comprising the first element and the semiconductor,a first unconverted layer of the substrate remains after the annealing, such that the first layer is between the second layer and the first unconverted layer, andthe annealing forms at least one pinhole area through the first layer such that at least a portion of the second element is capable of diffusing through the at least one pinhole area from the second layer to the first unconverted layer.
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Abstract
Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
16 Citations
20 Claims
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1. A method comprising, in order:
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by ion-implantation, implanting a first element as a first ion into a first region of a substrate at a first depth below a surface of the substrate; by ion-implantation, implanting a second element as a second ion into a second region of the substrate at a second depth below the surface, the second depth being between the surface and the first depth; and annealing the substrate, wherein; the substrate comprises a semiconductor, the first ion is different from the second ion, the annealing converts the second region to a second layer comprising the second element and the semiconductor, the annealing converts the first region to a first layer comprising the first element and the semiconductor, a first unconverted layer of the substrate remains after the annealing, such that the first layer is between the second layer and the first unconverted layer, and the annealing forms at least one pinhole area through the first layer such that at least a portion of the second element is capable of diffusing through the at least one pinhole area from the second layer to the first unconverted layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method comprising, in order:
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by ion-implantation, implanting a first element as a first ion into a first region of a substrate at a first depth below a surface of the substrate; by ion-implantation, implanting a second element as a second ion into a second region of the substrate at a second depth below the surface, the second region being between the surface and the first region; and annealing the substrate, wherein; the substrate comprises a crystalline semiconductor, the first ion is different from the second ion, the annealing converts the first region to a first crystalline layer comprising the first element and the semiconductor, the first crystalline layer has a thickness between greater than zero Å and
less than 100 Å
,the annealing converts the second region to a second crystalline layer comprising the second element and the semiconductor, the first layer is capable of transporting carriers between the second layer and an unconverted layer of the substrate, and the first layer is between the second layer and the unconverted layer.
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Specification