Group-IV solar cell structure using group-IV or III-V heterostructures
First Claim
Patent Images
1. A photovoltaic cell comprising:
- at least two group-IV subcells within a multijunction cell, wherein at least one upper subcell is positioned closer to a primary light source than at least one lower subcell, wherein the at least one upper subcell has a higher direct or indirect energy bandgap than the lower subcell, and wherein at least one of the group-IV subcells further comprises a first layer comprising a solar cell emitter layer formed from a group-IV layer, and a second layer comprising tunnel junctions formed from one or more group III-V semiconductor layers, the group-IV layer forming a heterojunction with the one or more group III-V semiconductor layers.
1 Assignment
0 Petitions
Accused Products
Abstract
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
21 Citations
19 Claims
-
1. A photovoltaic cell comprising:
at least two group-IV subcells within a multijunction cell, wherein at least one upper subcell is positioned closer to a primary light source than at least one lower subcell, wherein the at least one upper subcell has a higher direct or indirect energy bandgap than the lower subcell, and wherein at least one of the group-IV subcells further comprises a first layer comprising a solar cell emitter layer formed from a group-IV layer, and a second layer comprising tunnel junctions formed from one or more group III-V semiconductor layers, the group-IV layer forming a heterojunction with the one or more group III-V semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
17. A method for energy generation comprising the step of:
providing a photovoltaic cell comprising at least two group-IV subcells within a multijunction cell, wherein at least one upper subcell is positioned closer to a primary light source than at least one lower subcell, wherein the at least one upper subcell has a higher direct or indirect energy bandgap that the lower subcell, wherein at least one of the group-IV subcells further comprises a first layer comprising a solar cell emitter layer formed from a group-IV layer, and a second layer comprising tunnel junctions formed from one or more group III-V semiconductor layers, the group-IV layer forming a heterojunction with the one or more group III-V semiconductor layers, and wherein the group-IV layer is epitaxially grown on the one or more group III-V semiconductor layers. - View Dependent Claims (18, 19)
Specification