Optoelectronic semiconductor component

• US 9,985,171 B2
• Filed: 06/26/2017
• Issued: 05/29/2018
• Est. Priority Date: 08/07/2009
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Weidner, Karl, Wirth, Ralph, Kaltenbacher, Axel, Wegleiter, Walter, Barchmann, Bernd, Wutz, Oliver, Marfeld, Jan
• Primary Examiner(s): Huynh, Andy
• Application Number:
  US15/632,544
• Publication Number:
  US 20170294552A1
• Time in Patent Office: 337 Days
• Field of Search: 257 88
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3185 the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 25/042 the devices being arranged next to each other solar cells H01L31/042
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 31/02005 for device characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02322 comprising luminescent members, e.g. fluorescent sheets upon the device
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.

Claims

1. An optoelectronic semiconductor component comprising:

an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting said top area and said bottom area;

electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and

an electrically insulating shaped body, wherein

the optoelectronic semiconductor chip is a flip-chip having said electrical contract locations only at one side, either the underside or the top side,

the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and

the shaped body is free of any conductive element that electrically connects the optoelectronic semiconductor chip.

2. The optoelectronic semiconductor component according to claim 1, wherein the electrical contact locations of the optoelectronic semiconductor chip are freely accessible and the optoelectronic semiconductor component is electrically contactable via the electrical contact locations of the optoelectronic semiconductor chip.

3. The optoelectronic semiconductor component according to claim 1, wherein the shaped body is reflective for electromagnetic radiation produced during operation of the optoelectronic semiconductor chip.

4. The optoelectronic semiconductor component according to claim 1, wherein the shaped body comprises side surface facing away from the side areas of the optoelectronic semiconductor chip, and the side surfaces comprise grooves.

5. The optoelectronic semiconductor component according to claim 1, further comprising a phosphor layer comprising phosphor particles, wherein the phosphor layer covers the shaped body and the optoelectronic semiconductor chip and the phosphor particles absorb electromagnetic radiation generated by the semiconductor chip during operation and reemit electro-magnetic radiation in a different wavelength range than the optoelectronic semiconductor chip.

6. The optoelectronic semiconductor component according to claim 5, wherein the phosphor layer covers the whole surface of the optoelectronic semiconductor chip and of the shaped body at sides of the optoelectronic semiconductor chip and the shaped body facing away from the electrical contact locations.

7. The optoelectronic semiconductor component according to claim 6, wherein the phosphor layer directly contacts the optoelectronic semiconductor chip and the shaped body.

8. The optoelectronic semiconductor component according to claim 5, wherein the phosphor layer is a ceramic lamina comprising a ceramic phosphor.

9. The optoelectronic semiconductor component according to claim 5, wherein the phosphor layer comprises a matrix material into which phosphor particles are introduced.

10. The optoelectronic semiconductor component according to claim 5, wherein the shaped body comprises a first matrix material into which particles that reflect electromagnetic radiation are introduced, the phosphor layer comprises a second matrix material into which phosphor particles are introduced, and the first and the second matrix material are the same.

11. The optoelectronic semiconductor component according to claim 1, wherein the top area and the bottom area of the optoelectronic semiconductor chip are completely free of the shaped body.

12. The optoelectronic semiconductor component according to claim 1, wherein the shaped body does not project beyond the optoelectronic semiconductor chip in a vertical direction that runs along the side areas of the optoelectronic semiconductor chip.

13. The optoelectronic semiconductor component according to claim 1, wherein the shaped body covers the side areas of the semiconductor chip up to a selected height such that the side areas of the semiconductor chip are free of the shaped body in places or the surface at the top side and the surface at the underside of the shaped body terminates flush with the top area and bottom area of the semiconductor chip, respectively.

14. An optoelectronic semiconductor component comprising:

an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting said top area and said bottom area;

electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip;

an electrically insulating shaped body; and

a phosphor layer comprising phosphor particles, wherein the phosphor layer covers the shaped body and the optoelectronic semiconductor chip and the phosphor particles absorb electromagnetic radiation generated by the semiconductor chip during operation and reemit electro-magnetic radiation in a different wavelength range than the optoelectronic semiconductor chip,

wherein

the optoelectronic semiconductor chip is a flip-chip having said electrical contract locations only at one side, either the underside or the top side,

the shaped body surrounds the optoelectronic semiconductor chip at its side areas,

the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip, and

the phosphor layer comprises side surfaces, the shaped body comprises side surfaces facing away from the side areas of the optoelectronic semiconductor chip, and at least one side surface of the phosphor layer terminates flush with at least one side area of the shaped body.