Light emitting diode chip

• US 9,985,180 B2
• Filed: 08/08/2017
• Issued: 05/29/2018
• Est. Priority Date: 05/20/2014
• Status: Active Grant

• Current Assignee: Everlight Electronics Company Limited, Southern Taiwan University of Science and Technology
• Original Assignee: Everlight Electronics Company Limited, Southern Taiwan University of Science and Technology
• Inventors: Lee, Ming-Lun
• Primary Examiner(s): Green, Telly
• Application Number:
  US15/672,179
• Publication Number:
  US 20170358710A1
• Time in Patent Office: 294 Days
• Field of Search: 257 13
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1≤A2/(A1 A2)≤0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Claims

1. A light emitting diode chip comprising:

a substrate comprising a growth surface and a plurality of microstructures on the growth surface, wherein a surface roughness of the growth surface does not exceed 10 nanometers; and

a light emitting diode element layer disposed on the growth surface.

2. The light emitting diode chip of claim 1, wherein the plurality of microstructures comprise a plurality of protrusions, wherein a shape of one or more protrusions of the plurality of protrusions is oval, triangular, rectangular or polygonal.

3. The light emitting diode chip of claim 1, wherein the light emitting diode element layer comprises:

a first conductivity type semiconductor layer disposed on the growth surface;

a light emitting layer disposed on the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer disposed on the light emitting layer.

4. The light emitting diode chip of claim 3, wherein the light emitting diode element layer further comprises:

a first electrode electrically connected with the first conductivity type semiconductor layer; and

a second electrode electrically connected with the second conductivity type semiconductor layer.

5. The light emitting diode chip of claim 4, wherein the light emitting diode element layer further comprises:

a transparent conductive layer disposed on the second conductivity type semiconductor layer, wherein the second electrode is electrically connected with the second conductivity type conductor layer through the transparent conductive layer.

6. The light emitting diode chip of claim 5, wherein the transparent conductive layer comprises indium tin oxide (ITO), indium zinc oxide (IZO), or metal oxide.

7. The light emitting diode chip of claim 5, wherein a thickness of the transparent conductive layer is greater than 0.03 micron.

8. The light emitting diode chip of claim 5, wherein a thickness of the transparent conductive layer is between 0.03 micron and 0.3 micron.

9. The light emitting diode chip of claim 5, wherein the light emitting diode element layer further comprises:

a reflective layer disposed on the transparent conductive layer, wherein the transparent conductive layer is disposed between the reflective layer and the second conductivity type conductive layer.

10. The light emitting diode chip of claim 9, wherein the reflective layer comprises silver or aluminum.

11. The light emitting diode chip of claim 1, wherein a surface roughness of a surface of each microstructure of the plurality of microstructures does not exceed 10 nanometers.

12. The light emitting diode chip of claim 1, comprising a flip-chip light emitting diode (LED) chip, a vertical type light emitting diode (LED) chip, or a horizontal type light emitting diode (LED) chip.

13. A light emitting diode chip comprising:

a substrate comprising;

a plurality of recesses; and

a plurality of protrusions connected between the plurality of the recesses; and

a light emitting diode element layer disposed on the plurality of the recesses and the plurality of the protrusions,

wherein a surface roughness of a surface of one of the recesses does not exceed 10 nanometers.

14. The light emitting diode chip of claim 13, wherein a surface roughness of a surface of one of the protrusions does not exceed 10 nanometers.

15. The light emitting diode chip of claim 13, wherein a shape of one or more of the plurality of the protrusions is oval, triangular, rectangular or polygonal.

16. The light emitting diode chip of claim 13, wherein the light emitting diode element layer comprises:

a first conductivity type semiconductor layer disposed on the plurality of the recesses and the plurality of the protrusions;

a light emitting layer disposed on the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer disposed on the light emitting layer.

17. The light emitting diode chip of claim 16, wherein the light emitting diode element layer further comprises:

a first electrode electrically connected with the first conductivity type semiconductor layer; and

a second electrode electrically connected with the second conductivity type semiconductor layer.

18. The light emitting diode chip of claim 17, wherein the light emitting diode element layer further comprises:

a transparent conductive layer disposed on the second conductivity type semiconductor layer, wherein the second electrode is electrically connected with the second conductivity type conductor layer through the transparent conductive layer.

19. The light emitting diode chip of claim 18, wherein the transparent conductive layer comprises indium tin oxide (ITO), indium zinc oxide (IZO), or metal oxide.

20. The light emitting diode chip of claim 18, wherein a thickness of the transparent conductive layer is greater than 0.03 micron.

21. The light emitting diode chip of claim 18, wherein a thickness of the transparent conductive layer is between 0.03 micron and 0.3 micron.

22. The light emitting diode chip of claim 18, wherein the light emitting diode element layer further comprises:

a reflective layer disposed on the transparent conductive layer, wherein the transparent conductive layer is disposed between the reflective layer and the second conductivity type conductive layer.

23. The light emitting diode chip of claim 22, wherein the reflective layer comprises silver or aluminum.

24. The light emitting diode chip of claim 13, comprising a flip-chip light emitting diode (LED) chip, a vertical type light emitting diode (LED) chip, or a horizontal type light emitting diode (LED) chip.