Epitaxial formation support structures and associated methods
First Claim
1. A solid state lighting (SSL) device, comprising:
- a cured support substrate having a sintered planar surface, wherein the support substrate has a coefficient of thermal expansion (CTE) substantially similar to that of N-type gallium nitride (GaN);
a formation structure directly bonded to the sintered planar surface of the support substrate; and
an SSL structure directly on the formation structure, wherein the SSL structure includes at least a first semiconductor material epitaxially grown on the formation structure,wherein the sintered planar surface of the support substrate is uniformly flat such that any warp from the support substrate to the SSL structure is substantially eliminated.
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Accused Products
Abstract
Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.
28 Citations
10 Claims
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1. A solid state lighting (SSL) device, comprising:
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a cured support substrate having a sintered planar surface, wherein the support substrate has a coefficient of thermal expansion (CTE) substantially similar to that of N-type gallium nitride (GaN); a formation structure directly bonded to the sintered planar surface of the support substrate; and an SSL structure directly on the formation structure, wherein the SSL structure includes at least a first semiconductor material epitaxially grown on the formation structure, wherein the sintered planar surface of the support substrate is uniformly flat such that any warp from the support substrate to the SSL structure is substantially eliminated. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A solid state lighting (SSL) device, comprising:
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a cured support substrate having a sintered planar surface, wherein the support substrate has a coefficient of thermal expansion (CTE) substantially similar to that of III-nitrides, wherein the planar surface of the support substrate is formed by curing the support substrate between two reference plates; a formation structure directly bonded to the sintered planar surface of the support substrate; and an SSL structure directly on the formation structure, wherein the SSL structure includes at least a first semiconductor material epitaxially grown on the formation structure, an active region on the first semiconductor material, and a second semiconductor material on the active region, wherein the sintered planar surface of the support substrate is uniformly flat such that any warp from the support substrate to the SSL structure is substantially eliminated. - View Dependent Claims (9, 10)
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Specification