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Method of fabricating integrated structure for MEMS device and semiconductor device

  • US 9,988,264 B2
  • Filed: 09/18/2014
  • Issued: 06/05/2018
  • Est. Priority Date: 03/27/2008
  • Status: Active Grant
First Claim
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1. A method of fabricating an integrated structure for a MEMS device and a semiconductor device, comprising:

  • providing a substrate, wherein the integrated structure comprises a MEMS region including a first portion of the substrate and an area directly above the first portion of the substrate, an etch stopping device region including a second portion of the substrate and an area directly above the second portion of the substrate, and a semiconductor device region including a third portion of the substrate and an area directly above the third portion of the substrate, the MEMS region is separated from the semiconductor device region by the etch stopping device region, a transistor is disposed on the substrate in the semiconductor device region, and a first MEMS component is disposed on the substrate in the MEMS region;

    performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers;

    forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in the etch stopping device region;

    forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region;

    forming a top conductive layer on the first dielectric layers to electrically connect to the conductive plug and the conductive layer in the first dielectric layers;

    forming a passivation layer to cover the top conductive layer but not covering the second MEMS component; and

    performing an etching process to remove the third dielectric layers in the MEMS region.

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