Atomic layer etching in continuous plasma
First Claim
1. A method of etching a material of a substrate, the method comprising:
- exposing a substrate in a processing chamber to a plasma-generated reactive species, and while the substrate is exposed to the plasma-generated reactive species, also exposing the substrate to plasma-generated inert ions to remove a material exposed on the substrate using self-limiting reactions,wherein an energy threshold for removing a layer of the material modified by the reactive species using the inert ions is less than an energy threshold for sputtering the material exposed on the substrate using the inert ions.
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Abstract
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.
126 Citations
19 Claims
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1. A method of etching a material of a substrate, the method comprising:
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exposing a substrate in a processing chamber to a plasma-generated reactive species, and while the substrate is exposed to the plasma-generated reactive species, also exposing the substrate to plasma-generated inert ions to remove a material exposed on the substrate using self-limiting reactions, wherein an energy threshold for removing a layer of the material modified by the reactive species using the inert ions is less than an energy threshold for sputtering the material exposed on the substrate using the inert ions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification