Method for fabricating a fin field effect transistor and a shallow trench isolation
First Claim
1. A method for fabricating a shallow trench isolation (STI) structure, comprising:
- introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate, wherein a width of the trench ranges from about 20 nm to about 48 nm and a depth of the trench ranges from about 40 nm to about 70 nm; and
introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;
1 to 3;
1 during the flowable dielectric layer is treated.
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Abstract
A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.
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Citations
20 Claims
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1. A method for fabricating a shallow trench isolation (STI) structure, comprising:
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introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate, wherein a width of the trench ranges from about 20 nm to about 48 nm and a depth of the trench ranges from about 40 nm to about 70 nm; and introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;
1 to 3;
1 during the flowable dielectric layer is treated. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating a shallow trench isolation (STI) structure, comprising:
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depositing a flowable dielectric layer in a trench of a substrate by introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade, wherein a width of the trench ranges from about 20 nm to about 48 nm and a depth of the trench ranges from about 40 nm to about 70 nm; discontinuing supply of the silane-base precursor and the nitrogen-base precursor; and curing the flowable dielectric layer by introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;
1 to 3;
1. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for fabricating a fin field effect transistor (FinFET), comprising:
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patterning a substrate to form trenches in the substrate and semiconductor fins between the trenches; introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade to deposit a flowable dielectric layer in the trenches of a substrate, wherein a width of the trenches ranges from about 20 nm to about 48 nm and a depth of the trenches ranges from about 40 nm to about 70 nm; introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;
1 to 3;
1 during the flowable dielectric layer is treated;partially removing the flowable dielectric layer to form a plurality of insulators; forming a gate stack over portions of the semiconductor fins and over portions of the insulators; and forming a strained material over portions of the semiconductor fins revealed by the gate stack. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification