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Semiconductor device and method of manufacturing thereof

  • US 9,991,310 B2
  • Filed: 07/27/2017
  • Issued: 06/05/2018
  • Est. Priority Date: 09/24/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein;

    a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer;

    an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer; and

    a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer.

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