Semiconductor device and method of manufacturing thereof
First Claim
1. A semiconductor device, comprising:
- a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein;
a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer;
an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer; and
a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer.
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Accused Products
Abstract
A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer, and a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer.
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Citations
8 Claims
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1. A semiconductor device, comprising:
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a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein; a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer; an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer; and a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification