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Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the same

  • US 9,991,335 B2
  • Filed: 11/18/2014
  • Issued: 06/05/2018
  • Est. Priority Date: 04/18/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a polarization super junction region and a p-electrode contact region which are separated from each other,the polarization super junction region, comprising;

    a first undoped GaN layer,an undoped AlxGa1-xN layer (0.17≤

    x≤

    0.35) with a thickness not smaller than 25 nm and not larger than 47 nm on the first undoped GaN layer,a second undoped GaN layer on the undoped layer; and

    a Mg-doped p-type GaN layer on the second undoped GaN layer,
    tR≥

    0.864/(x−

    0.134)+46.0 [nm]being satisfied when the thickness of the second undoped GaN layer is denoted as u[nm], the thickness of the p-type GaN layer is denoted as v[nm], the Mg concentration of the p-type GaN layer is denoted as w [cm

    3
    ] and the reduced thickness tR is defined as
    tR=u+v(1+

    10

    18
    ),wherein the thickness of the p-type GaN layer v [nm]≤

    20 [nm] and the Mg concentration of the p-type GaN layer w[cm

    3
    ]≤



    1018[cm

    3
    ],the p-electrode contact region, comprising;

    a p-type GaN contact layer which is doped with Mg heavier than the p-type GaN layer, provided in contact with the p-type GaN layer only in the p-electrode contact region; and

    a p-electrode which is in ohmic contact with the p-type GaN contact layer,a two-dimensional hole gas being formed in the second undoped GaN layer in the vicinity part of a hetero-interface between the undoped AlxGa1-xN layer and the second undoped GaN layer, and a two-dimensional electron gas being formed in the first undoped GaN layer in the vicinity part of a hetero-interface between the first undoped GaN layer and the undoped AlxGa1-xN layer at a non-operating time.

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