Systems and methods for preparing GaN and related materials for micro assembly
First Claim
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1. A method of preparing released or releasable structures from a silicon native device substrate, the method comprising:
- depositing at least one of GaN, AlGaN, InGaN, InGaAlN, and SiN on a native device substrate comprising Si (1 1
1), thereby forming an epitaxial material;
forming devices using the epitaxial material on the native device substrate;
forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate;
forming anchoring structures and tethering structures that are at least partially in contact with a side of the releasable structure opposite the native device substrate and at least partially in contact with the native device substrate;
removing silicon material underneath the releasable structures with an etchant to form tethers connecting the releasable structures to anchors, thereby forming printable structures comprising the devices, wherein the position and orientation of the printable structures is maintained by the tethers and anchors.
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Abstract
The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high-voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.
95 Citations
19 Claims
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1. A method of preparing released or releasable structures from a silicon native device substrate, the method comprising:
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depositing at least one of GaN, AlGaN, InGaN, InGaAlN, and SiN on a native device substrate comprising Si (1 1
1), thereby forming an epitaxial material;forming devices using the epitaxial material on the native device substrate; forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; forming anchoring structures and tethering structures that are at least partially in contact with a side of the releasable structure opposite the native device substrate and at least partially in contact with the native device substrate; removing silicon material underneath the releasable structures with an etchant to form tethers connecting the releasable structures to anchors, thereby forming printable structures comprising the devices, wherein the position and orientation of the printable structures is maintained by the tethers and anchors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A released or releasable structure on a silicon native device substrate, comprising:
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a native device substrate comprising Si (1 1
1), having an epitaxial material deposited thereon comprising at least one of GaN, AlGaN, InGaN, InGaAlN, and SiN;a plurality of devices formed using the epitaxial material on the native device substrate, wherein at least a portion of the epitaxial material is removed from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate; anchoring structures and tethering structures that are at least partially in contact with a side of each device opposite the native device substrate and at least partially in contact with the native device substrate; a cavity in the silicon material underneath the releasable structures defining tethers connecting the devices to anchors, thereby forming printable structures comprising the devices, wherein the position and orientation of the printable structures is maintained by the tethers and anchors. - View Dependent Claims (16, 17, 18, 19)
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Specification