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Systems and methods for preparing GaN and related materials for micro assembly

  • US 9,991,413 B2
  • Filed: 08/03/2017
  • Issued: 06/05/2018
  • Est. Priority Date: 06/18/2014
  • Status: Active Grant
First Claim
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1. A method of preparing released or releasable structures from a silicon native device substrate, the method comprising:

  • depositing at least one of GaN, AlGaN, InGaN, InGaAlN, and SiN on a native device substrate comprising Si (1 1

         1), thereby forming an epitaxial material;

    forming devices using the epitaxial material on the native device substrate;

    forming releasable structures comprising the devices by removing at least a portion of the epitaxial material from around at least a portion of the devices in the epitaxial material, thereby partially exposing the native device substrate;

    forming anchoring structures and tethering structures that are at least partially in contact with a side of the releasable structure opposite the native device substrate and at least partially in contact with the native device substrate;

    removing silicon material underneath the releasable structures with an etchant to form tethers connecting the releasable structures to anchors, thereby forming printable structures comprising the devices, wherein the position and orientation of the printable structures is maintained by the tethers and anchors.

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