Light-emitting diode and method for manufacturing same

• US 9,991,424 B2
• Filed: 11/18/2016
• Issued: 06/05/2018
• Est. Priority Date: 12/23/2011
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Im, Tae Hyuk, Kim, Chang Yeon, Yoon, Yeo Jin, Lee, Joon Hee, Nam, Ki Bum, Kim, Da Hye, Im, Chang Ik, Kim, Young Wug
• Primary Examiner(s): ULLAH, ELIAS
• Application Number:
  US15/355,219
• Publication Number:
  US 20170069799A1
• Time in Patent Office: 564 Days
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

Claims

1. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing a portion of the semiconductor stack;

an insulation layer disposed between the support substrate and the semiconductor stack, the insulation layer disposed in the groove; and

a first electrode comprising a first electrode pad and a first electrode extension, the first electrode contacting the n-type compound semiconductor layer of the semiconductor stack,

wherein;

the first electrode extension is connected to the first electrode pad;

the first electrode extension is formed along an outer boundary of the light-emitting diode; and

the first electrode extension comprises a Ni layer contacting the n-type compound semiconductor layer and at least two Au layers disposed on the Ni layer.

2. The light-emitting diode of claim 1, wherein the insulation layer overlaps at least one of the first electrode pad and the first electrode extension.

3. The light-emitting diode of claim 2, wherein the first electrode pad and the first electrode extension do not overlap the reflective metal layer.

4. The light-emitting diode of claim 1, wherein the first electrode further comprises a second electrode extension formed substantially parallel to a portion of the first electrode extension and connected to the first electrode pad.

5. The light-emitting diode of claim 4, wherein:

the insulation layer is further formed on an outer end of the semiconductor stack; and

the first electrode extension and the second electrode extension overlap the insulation layer.

6. The light-emitting diode of claim 1, wherein the first electrode pad and the first electrode extension overlap the insulation layer.

8. The light-emitting diode of claim 4, wherein the first electrode extension is disposed on the flat surface of the n-type compound semiconductor layer.

7. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing a portion of the semiconductor stack;

an insulation layer disposed between the support substrate and the semiconductor stack, the insulation layer disposed in the groove; and

a first electrode comprising a first electrode pad and a first electrode extension, the first electrode contacting the n-type compound semiconductor layer of the semiconductor stack,

wherein;

the first electrode extension is connected to the first electrode pad;

the first electrode extension is formed along an outer boundary of the light-emitting diode;

a top surface of the n-type compound semiconductor layer comprises a roughened surface and a flat surface; and

the first electrode pad is disposed on the flat surface of the n-type compound semiconductor layer.

9. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing a portion of the semiconductor stack;

an insulation layer disposed between the support substrate and the semiconductor stack, the insulation layer disposed in the groove and on an outer end of the semiconductor stack; and

a first electrode comprising a first electrode pad and an electrode extension, the first electrode contacting the n-type compound semiconductor layer of the semiconductor stack,

wherein the first electrode pad and the electrode extension overlap the insulation layer, and

wherein a top surface of the n-type compound semiconductor layer comprises a roughened surface and a flat surface.

10. The light-emitting diode of claim 9, wherein the first electrode pad and the electrode extension are disposed on the flat surface of the n-type compound semiconductor layer.

11. The light-emitting diode of claim 10, wherein the first electrode pad and the electrode extension do not overlap the reflective metal layer.

12. The light-emitting diode of claim 11, wherein the electrode extension is connected to the first electrode pad and is formed along an outer boundary of the light-emitting diode.

13. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing a portion of the semiconductor stack;

an insulation layer disposed between the support substrate and the semiconductor stack, the insulation layer disposed in the groove and on an outer end of the semiconductor stack; and

a first electrode comprising a first electrode pad and an electrode extension, the first electrode contacting the n-type compound semiconductor layer of the semiconductor stack,

wherein the first electrode pad and the electrode extension overlap the insulation layer, and

wherein the electrode extension comprises a Ni layer contacting the n-type compound semiconductor layer, and at least two Au layers disposed on the Ni layer.

14. A light-emitting diode, comprising:

a support substrate;

a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing a portion of the semiconductor stack;

an insulation layer disposed between the support substrate and the semiconductor stack; and

a first electrode comprising a first electrode pad and an electrode extension connected to the first electrode pad,

wherein;

a top surface of the n-type compound semiconductor layer comprises a roughened surface and a flat surface; and

the first electrode pad and the electrode extension are disposed on the flat surface of the n-type compound semiconductor layer.

15. The light-emitting diode of claim 14, wherein the electrode extension comprises:

a Ni layer contacting the n-type compound semiconductor layer; and

at least two Au layers disposed on the Ni layer.

16. The light-emitting diode of claim 14, wherein the insulation layer is disposed in the groove and on an outer boundary of the semiconductor stack.

17. The light-emitting diode of claim 16, wherein the first electrode pad and the electrode extension each overlap the insulation layer.