Light emitting device and light emitting device package
First Claim
1. A method of manufacturing a face-up type light emitting device, comprising:
- forming a nitride semiconductor stacked structure by stacking an n type nitride semiconductor layer, a light emitting layer and a p type nitride semiconductor layer in order on a front surface of a substrate wafer, the substrate wafer having the front surface as a light extraction surface and a rear surface opposite the front surface, and the substrate wafer being transparent to an emission wavelength of the light emitting layer;
forming a transparent adhesive layer on the entire rear surface of the substrate wafer;
depositing a reflecting metal on the entire rear surface of the transparent adhesive layer, the reflecting metal being formed of an alloy containing Ag, a Pt group metal and Cu;
forming a bonding metal on a rear surface of the reflecting metal such that a portion of the reflecting metal is selectively exposed along a planned cutting line of the substrate wafer;
selectively exposing a portion of the transparent adhesive layer along the planned cutting line by removing the exposed portion of the reflecting metal by etching;
forming a division guide groove along the planned cutting line on the exposed transparent adhesive layer and the substrate wafer by an irradiation process from the rear surface of the substrate wafer; and
dividing the substrate wafer along the division guide groove.
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Accused Products
Abstract
A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.
10 Citations
14 Claims
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1. A method of manufacturing a face-up type light emitting device, comprising:
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forming a nitride semiconductor stacked structure by stacking an n type nitride semiconductor layer, a light emitting layer and a p type nitride semiconductor layer in order on a front surface of a substrate wafer, the substrate wafer having the front surface as a light extraction surface and a rear surface opposite the front surface, and the substrate wafer being transparent to an emission wavelength of the light emitting layer; forming a transparent adhesive layer on the entire rear surface of the substrate wafer; depositing a reflecting metal on the entire rear surface of the transparent adhesive layer, the reflecting metal being formed of an alloy containing Ag, a Pt group metal and Cu; forming a bonding metal on a rear surface of the reflecting metal such that a portion of the reflecting metal is selectively exposed along a planned cutting line of the substrate wafer; selectively exposing a portion of the transparent adhesive layer along the planned cutting line by removing the exposed portion of the reflecting metal by etching; forming a division guide groove along the planned cutting line on the exposed transparent adhesive layer and the substrate wafer by an irradiation process from the rear surface of the substrate wafer; and dividing the substrate wafer along the division guide groove. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification