Chemical sensor with sidewall spacer sensor surface
First Claim
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1. A method for manufacturing a chemical sensor, the method comprising:
- forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;
forming a dielectric material defining an opening extending to the upper surface of the floating gate conductor;
forming a conductive sidewall spacer on a sidewall of the opening and contacting the floating gate conductor; and
oxidizing an inner surface of the conductive sidewall spacer.
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Abstract
In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.
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Citations
20 Claims
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1. A method for manufacturing a chemical sensor, the method comprising:
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forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface; forming a dielectric material defining an opening extending to the upper surface of the floating gate conductor; forming a conductive sidewall spacer on a sidewall of the opening and contacting the floating gate conductor; and oxidizing an inner surface of the conductive sidewall spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification