Method for transferring semiconductor structure

• US 9,997,399 B2
• Filed: 05/19/2017
• Issued: 06/12/2018
• Est. Priority Date: 08/16/2016
• Status: Active Grant

• Current Assignee: Mikro Mesa Technology Co., Ltd.
• Original Assignee: Mikro Mesa Technology Co., Ltd.
• Inventors: Lin, Shih-Chyn, Chen, Li-Yi
• Primary Examiner(s): Maruf, Sheikh
• Application Number:
  US15/599,482
• Publication Number:
  US 20180053684A1
• Time in Patent Office: 389 Days
• Field of Search: 438 26, 438 27, 438 46, 438 34, 438455, 438464, 257 40, 257100, 257E21499
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/02104 Forming layers deposition in general C23C; crystal growth in general C30B
• CPC Class Codes: H01L 21/30 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 manufacture of electrodes thereon H01L21/28
• CPC Class Codes: H01L 21/768 Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
• CPC Class Codes: H01L 2224/80006 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.

Claims

1. A method for transferring at least one semiconductor structure, the method comprising:

coating an adhesive layer onto a carrier substrate;

disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure thereto, wherein the adhesive layer comprises at least one adhesive component and at least one surfactant component at least after the disposing, the semiconductor structure comprises a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing;

irradiating at least one first electromagnetic wave through at least one of the carrier substrate and the semiconductor structure to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains within a predictable position on the adhesive layer, wherein at least one of the carrier substrate and a combination of the body and the bottom electrode has a pass band in between ultraviolet to infrared; and

transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.

2. The method of claim 1, wherein the pass band of the bottom electrode, the pass band of the body, and a spectrum of the first electromagnetic wave at least partially overlap.

3. The method of claim 2, further comprising:

irradiating at least one second electromagnetic wave to the adhesive layer to reduce the adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains within the predictable position on the adhesive layer, wherein the pass band of the carrier substrate and a spectrum of the second electromagnetic wave at least partially overlap.

4. The method of claim 3, wherein a time period of irradiating the first electromagnetic wave and a time period of irradiating the second electromagnetic wave do not overlap.

5. The method of claim 3, wherein a time period of irradiating the first electromagnetic wave and a time period of irradiating the second electromagnetic wave at least partially overlap.

6. The method of claim 1, wherein the pass band of the carrier substrate and a spectrum of the first electromagnetic wave at least partially overlap.

7. The method of claim 1, further comprising:

mixing the surfactant component with the adhesive component before the coating.

8. The method of claim 1, further comprising:

disposing the surfactant component onto a bottom surface of the semiconductor structure before the semiconductor structure is disposed onto the adhesive layer, wherein the bottom surface of the semiconductor structure is in contact with the adhesive layer after the semiconductor structure is disposed onto the adhesive layer.

9. The method of claim 1, further comprising:

disposing the surfactant component onto a top surface of the adhesive layer before the semiconductor structure is disposed onto the adhesive layer, wherein the top surface of the adhesive layer is in contact with the semiconductor structure after the semiconductor structure is disposed onto the adhesive layer.

10. The method of claim 1, wherein the surfactant component comprises at least one fluorosurfactant component, at least one silicone surfactant component, at least one hydrocarbon surfactant component, or any combination thereof.

11. The method of claim 1, wherein the surfactant component comprises at least one fluorosurfactant component, at least one silicone surfactant component, or any combination thereof.

12. The method of claim 1, wherein the surfactant component comprises at least one fluorosurfactant component.

13. The method of claim 1, wherein the first electromagnetic wave to the adhesive layer drives the surfactant component toward a top surface of the adhesive layer facing the semiconductor structure.

14. The method of claim 1, wherein the pass band of the carrier substrate is in a range between about 150 nm to about 1800 nm.

15. The method of claim 1, wherein the pass band of the bottom electrode is in a range between about 150 nm to about 1800 nm.

16. The method of claim 1, wherein the pass band of the body is in a range between about 150 nm to about 1800 nm.

17. The method of claim 1, wherein the first electromagnetic wave has a spectrum in a range between about 150 nm to about 1800 nm.

18. The method of claim 1, wherein the reduced adhesion pressure of the adhesive layer to the semiconductor structure is smaller than the adhesion pressure of the adhesive layer to the carrier substrate.

19. The method of claim 1, wherein the first electromagnetic wave is irradiated from one side of the adhesive layer opposite to the carrier substrate.

20. The method of claim 1, wherein the first electromagnetic wave is irradiated from one side of the adhesive layer facing the carrier substrate.