Method for transferring semiconductor structure
First Claim
1. A method for transferring at least one semiconductor structure, the method comprising:
- coating an adhesive layer onto a carrier substrate;
disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure thereto, wherein the adhesive layer comprises at least one adhesive component and at least one surfactant component at least after the disposing, the semiconductor structure comprises a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing;
irradiating at least one first electromagnetic wave through at least one of the carrier substrate and the semiconductor structure to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains within a predictable position on the adhesive layer, wherein at least one of the carrier substrate and a combination of the body and the bottom electrode has a pass band in between ultraviolet to infrared; and
transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.
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Accused Products
Abstract
A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.
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Citations
20 Claims
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1. A method for transferring at least one semiconductor structure, the method comprising:
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coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure thereto, wherein the adhesive layer comprises at least one adhesive component and at least one surfactant component at least after the disposing, the semiconductor structure comprises a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating at least one first electromagnetic wave through at least one of the carrier substrate and the semiconductor structure to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains within a predictable position on the adhesive layer, wherein at least one of the carrier substrate and a combination of the body and the bottom electrode has a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification