Device architecture and method for precision enhancement of vertical semiconductor devices
First Claim
1. A trimmable vertical semiconductor device, comprising:
- a first vertical semiconductor device having a first gate terminal, a first source terminal and a first drain terminal;
a second semiconductor device having a second gate terminal, a second source terminal and a second drain terminal;
the first vertical semiconductor device connected in parallel to the second semiconductor device;
a first isolation fuse, connected between the first gate terminal and the second gate terminal; and
,the first isolation fuse including a first terminal and a second terminal, the first terminal connected to the first gate terminal and the second terminal connected to the second gate terminal and connected to a second isolation fuse.
1 Assignment
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Accused Products
Abstract
Improvement of key electrical specifications of vertical semiconductor devices, usually found in the class of devices known as discrete semiconductors, has a direct impact on the performance achievement and power efficiency of the systems in which these devices are used. Imprecise vertical device specifications cause system builders to either screen incoming devices for their required specification targets or to design their system with lower performance or lower efficiency than desired. Disclosed is an architecture and method for achieving a desired target specification for a vertical semiconductor device. Precise trimming of threshold voltage improves targeting of both on-resistance and switching time. Precise trimming of gate resistance also improves targeting of switching time. Precise trimming of a device'"'"'s effective width improves targeting of both on-resistance and current-carrying capability. Device parametrics are trimmed to improve a single device, or a parametric specification is targeted to match specifications on two or more devices.
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Citations
13 Claims
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1. A trimmable vertical semiconductor device, comprising:
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a first vertical semiconductor device having a first gate terminal, a first source terminal and a first drain terminal; a second semiconductor device having a second gate terminal, a second source terminal and a second drain terminal; the first vertical semiconductor device connected in parallel to the second semiconductor device; a first isolation fuse, connected between the first gate terminal and the second gate terminal; and
,the first isolation fuse including a first terminal and a second terminal, the first terminal connected to the first gate terminal and the second terminal connected to the second gate terminal and connected to a second isolation fuse. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification