Through silicon via structure
First Claim
1. A device comprising:
- a through substrate via extending through a substrate, the substrate comprising a device substrate and metallization layers disposed over a first side of the device substrate, the through substrate via comprising a first conductive material having a sidewall, a protruding end of the through substrate via protruding from a second side of the device substrate, wherein a liner covers the sidewall of the first conductive material from a distance below the top surface of the protruding end of the through substrate via to an end of the through substrate via opposite the protruding end, wherein a portion of the liner protrudes from the second side of the device substrate;
a first passivation layer disposed over the second side of the device substrate and over a portion of the liner that is disposed on the protruding end of the through substrate via, the first passivation layer having a stair-step surface extending away from the through substrate via;
a conductive interface layer disposed over and contacting the first passivation layer, the sidewall of the first conductive material, and the top surface of the protruding end of the through substrate via; and
a second conductive material disposed over the conductive interface layer and the first conductive material.
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Accused Products
Abstract
A device includes a through substrate via (TSV) extending through a device substrate. The TSV includes a first conductive material having a sidewall, a protruding end of the TSV protruding from a second side of the device substrate. A liner covers the sidewall of the first conductive material from a below the top surface of the protruding end of the TSV to an opposite end of the TSV. A passivation layer is disposed over the second side of the device substrate and over a portion of the liner disposed on the protruding end of the TSV, the passivation layer having a stair-step surface extending away from the TSV. A conductive interface layer is disposed over the passivation layer, the sidewall of the first conductive material, and the top surface of the protruding end of the TSV. A second conductive material is disposed over the first conductive material.
161 Citations
20 Claims
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1. A device comprising:
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a through substrate via extending through a substrate, the substrate comprising a device substrate and metallization layers disposed over a first side of the device substrate, the through substrate via comprising a first conductive material having a sidewall, a protruding end of the through substrate via protruding from a second side of the device substrate, wherein a liner covers the sidewall of the first conductive material from a distance below the top surface of the protruding end of the through substrate via to an end of the through substrate via opposite the protruding end, wherein a portion of the liner protrudes from the second side of the device substrate; a first passivation layer disposed over the second side of the device substrate and over a portion of the liner that is disposed on the protruding end of the through substrate via, the first passivation layer having a stair-step surface extending away from the through substrate via; a conductive interface layer disposed over and contacting the first passivation layer, the sidewall of the first conductive material, and the top surface of the protruding end of the through substrate via; and a second conductive material disposed over the conductive interface layer and the first conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device comprising:
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a liner disposed on sidewalls of an opening that extends through a substrate, the liner protruding from a first side of the substrate; a first conductive material disposed within the opening and protruding from the first side of the substrate; a first passivation layer disposed over the first side of the substrate and the first conductive material, the first passivation layer comprising a dielectric material, the first passivation layer having a first portion adjacent to the first side of the substrate and a second portion adjacent to the first conductive material that is protruding from the first side of the substrate, wherein the second portion of the first passivation layer extends farther from the substrate than the first portion of the first passivation layer, and wherein the liner that is protruding from the first side of the substrate extends farther from the substrate than the first portion of the first passivation layer; and a second conductive material disposed over the first portion of the first passivation layer and disposed over the sidewalls and the top surface of the first conductive material that is protruding from the first side of the substrate. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A device comprising:
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a first through substrate via extending from a first side of a substrate into the substrate, wherein a liner is interposed between the first through substrate via and the substrate, wherein the first through substrate via extends through at least one metallization layer adjacent the substrate, wherein the first through substrate via and the liner protrude from a second side of the substrate; a dielectric layer over the through substrate via and the liner, wherein a first portion of the dielectric layer contacting the liner extends farther from the substrate than a second portion of the dielectric layer at a location between the first through substrate via and an adjacent second through substrate via, wherein the liner extends farther from the substrate than the first portion of the dielectric layer; and a first semiconductor device electrically connecting the first through substrate via and the second through substrate via in a flip-chip configuration. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification