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Semiconductor device

  • US 9,997,568 B2
  • Filed: 06/06/2016
  • Issued: 06/12/2018
  • Est. Priority Date: 11/11/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a transistor provided over an insulating layer;

    a conductive layer which functions as a source wiring or a drain wiring of the transistor;

    a memory element which overlaps the transistor; and

    a conductive layer which functions as an antenna,wherein the memory element comprises a first conductive layer, an organic compound layer or a phase change layer and a second conductive layer laminated in this order; and

    wherein the conductive layer which functions as the antenna and the conductive layer which functions as the source wiring or the drain wiring of the transistor are provided on the same layer.

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