Semiconductor material doping
First Claim
1. A device comprising:
- a group III nitride radiation generating structure; and
a group III nitride superlattice layer at least partially transparent to radiation generated by the radiation generating structure, wherein the superlattice layer comprises a set of quantum well and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well.
0 Assignments
0 Petitions
Accused Products
Abstract
A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
-
Citations
20 Claims
-
1. A device comprising:
-
a group III nitride radiation generating structure; and a group III nitride superlattice layer at least partially transparent to radiation generated by the radiation generating structure, wherein the superlattice layer comprises a set of quantum well and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. An ultraviolet device comprising:
-
a group III nitride n-type layer; a group III nitride ultraviolet radiation generating structure located on the group III nitride n-type layer; and a group III nitride superlattice layer at least partially transparent to ultraviolet radiation generated by the radiation generating structure located on the ultraviolet radiation generating structure, wherein the superlattice layer comprises a set of quantum well and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well. - View Dependent Claims (15, 16, 17)
-
-
18. An ultraviolet device comprising:
-
a n-type layer; a radiation generating structure located on the n-type layer, wherein the ultraviolet radiation generating structure comprises a multiple quantum well structure; and a superlattice layer at least partially transparent to ultraviolet radiation generated by the radiation generating structure located on the ultraviolet radiation generating structure, wherein the superlattice layer comprises a set of quantum well and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;
a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well. - View Dependent Claims (19, 20)
-
Specification