Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module

• US 9,997,673 B2
• Filed: 08/24/2017
• Issued: 06/12/2018
• Est. Priority Date: 06/28/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A
• Primary Examiner(s): Coleman, William
• Application Number:
  US15/685,888
• Publication Number:
  US 20170352786A1
• Time in Patent Office: 292 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the second semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulation layer including a first insulating layer and a second insulating layer disposed on the first insulating layer, and overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer, in which the insulation layer has a first region having different thicknesses and a second region having a substantially constant thickness.

Claims

1. A light emitting diode (LED), comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

an active layer disposed on the first semiconductor layer;

a second semiconductor layer disposed on the active layer;

a first conductive layer disposed on a portion of the second semiconductor layer;

a second conductive layer disposed on the second semiconductor layer; and

an insulation layer comprising a first insulating layer and a second insulating layer disposed on the first insulating layer, and overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer,

wherein the insulation layer has a first region having different thicknesses and a second region having a substantially constant thickness.

2. The LED of claim 1, wherein:

the first region is adjacent to an end portion of the first semiconductor layer; and

the second region is adjacent to a middle portion of the first semiconductor layer.

3. The LED of claim 1, wherein a thickness of the first region is greater than a thickness of the second region.

4. The LED of claim 1, wherein the thickness of the first region varies along a longitudinal direction of the first semiconductor layer.

5. The LED of claim 1, wherein the first insulating layer has a thickness different from a thickness of the second insulating layer in the first region of the insulation layer.

6. The LED of claim 1, wherein:

the first region overlaps the first and second insulating layers; and

the second region overlaps only one of the first and second insulating layers.

7. The LED of claim 1, wherein the first region covers a side surface of the first semiconductor layer.

8. The LED of claim 1, wherein the thickness of the first region varies from a maximum thickness adjacent an end of the second semiconductor layer to a minimum thickness adjacent the middle of the second semiconductor layer.

9. The LED of claim 1, wherein the first region comprises:

a first thickness adjacent to an end of the first semiconductor layer;

a second thickness adjacent to the middle of the second semiconductor layer; and

a third thickness between the first and second thicknesses that gradually varies between the first and second thicknesses.

10. The LED of claim 1, wherein the first insulating layer and the second insulating layer comprise the same material.

11. The LED of claim 1, wherein the first insulating layer and the second insulating layer are formed in separate processes.

12. The LED of claim 8, wherein the minimum thickness is equal to or greater than 0.

13. A light emitting diode (LED), comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

an active layer disposed on the first semiconductor layer;

a second semiconductor layer disposed on the active layer;

a conductive layer disposed on a portion of the second semiconductor layer; and

a first insulating layer disposed on the conductive layer and having a first region overlapping the conductive layer and the second semiconductor layer, and a second region not overlapping the conductive layer,

wherein a thickness of the first insulating layer in the first region is greater than a thickness of the first insulating layer in the second region.

14. The LED of claim 13, further comprising a second insulating layer disposed on the first insulating layer.

15. The LED of claim 14, wherein the second insulating layer has a first area overlapping the first insulating layer and a second area not overlapping the first insulating layer.

16. The LED of claim 14, wherein the first insulating layer and the second insulating layer comprise the same material.

17. The LED of claim 14, wherein the first insulating layer and the second insulating layer are formed in separate processes.

18. The LED of claim 15, wherein a thickness of the second insulating layer is different between the first area and the second area.

19. The LED of claim 18, wherein the thickness of the second insulating layer is greater in the first area than in the second area.

20. A method of forming a light emitting diode (LED), the method comprising:

forming a substrate;

forming a first semiconductor layer on the substrate;

forming an active layer on the first semiconductor layer;

forming a second semiconductor layer on the active layer;

forming a conductive layer on a portion of the second semiconductor layer; and

forming an insulation layer overlapping the first semiconductor layer, the second semiconductor layer, and the conductive layer, with a first region having different thicknesses and a second region having a substantially constant thickness.

21. The method of claim 20, wherein forming the insulation layer comprises:

forming a first insulating layer on the portion of the first semiconductor layer; and

forming a second insulating layer on the first insulating layer.

22. The method of claim 20, wherein a portion of the insulation layer disposed adjacent to an end of the first semiconductor layer has a thickness greater than a portion of the insulation layer disposed adjacent to a middle of the first semiconductor layer.

23. The method of claim 21, wherein a portion of the first insulating layer overlapping the conductive layer has a thickness greater than a portion of the first insulating layer not overlapping the conductive layer.

24. The method of claim 21, wherein the second insulating layer is formed after the first insulating layer is formed.

25. The method of claim 21, wherein the first insulating layer and the second insulating layer comprise the same material.