Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
First Claim
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1. A non-volatile magnetic memory cell, comprising:
- a switchable magnetic element; and
a word line and a bit line configured to energize the switchable magnetic element, wherein at least one of the word line or the bit line includes a magnetic sidewall comprising multiple layers, and wherein the multiple layers of the magnetic sidewall are discontinuous along an extension direction of the word line or the bit line.
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Abstract
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
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Citations
18 Claims
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1. A non-volatile magnetic memory cell, comprising:
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a switchable magnetic element; and a word line and a bit line configured to energize the switchable magnetic element, wherein at least one of the word line or the bit line includes a magnetic sidewall comprising multiple layers, and wherein the multiple layers of the magnetic sidewall are discontinuous along an extension direction of the word line or the bit line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A memory device, comprising:
an array of magnetic memory cells, each cell including; a switchable magnetic element; and a word line and a bit line configured to energize the switchable magnetic element, wherein at least one of the word line or the bit line comprises a magnetic sidewall comprising multiple layers, and the multiple layers of the magnetic sidewall are discontinuous along an extension direction of the word line or the bit line. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
Specification