Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them

• US 9,997,697 B2
• Filed: 03/21/2017
• Issued: 06/12/2018
• Est. Priority Date: 12/29/2010
• Status: Active Grant

• Current Assignee: III Holdings 1, LLC
• Original Assignee: III Holdings 1, LLC
• Inventors: Mani, Krishnakumar
• Primary Examiner(s): Bernstein, Allison P
• Application Number:
  US15/465,276
• Publication Number:
  US 20170222129A1
• Time in Patent Office: 448 Days
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/20 comprising components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.

Claims

1. A non-volatile magnetic memory cell, comprising:

a switchable magnetic element; and

a word line and a bit line configured to energize the switchable magnetic element, wherein at least one of the word line or the bit line includes a magnetic sidewall comprising multiple layers, and wherein the multiple layers of the magnetic sidewall are discontinuous along an extension direction of the word line or the bit line.

2. The non-volatile magnetic memory cell of claim 1, wherein the multiple layers comprise an inner layer, an outer layer, and a middle layer sandwiched between the inner layer and the outer layer.

3. The non-volatile magnetic memory cell of claim 2, wherein the middle layer is magnetic.

4. The non-volatile magnetic memory cell of claim 3, wherein the inner layer and the outer layer are non-magnetic.

5. The non-volatile magnetic memory cell of claim 1, wherein both the word line and the bit line comprise the magnetic sidewall.

6. The non-volatile magnetic memory cell of claim 1, wherein the magnetic sidewall comprises portions located at those sections that are proximate the switchable magnetic element of the at least one word line and bit line.

7. The non-volatile magnetic memory cell of claim 6, wherein the portions are rectangular.

8. The non-volatile magnetic memory cell of claim 7, wherein each of the portions has an aspect ratio of 1.

9. The non-volatile magnetic memory cell of claim 7, wherein each of the portions has a thickness that is less than 10 nm.

10. The non-volatile magnetic memory cell of claim 7, wherein the switchable magnetic element comprises a Magnetic Tunnel Junction (MTJ).

11. A memory device, comprising:

an array of magnetic memory cells, each cell including;

a switchable magnetic element; and

a word line and a bit line configured to energize the switchable magnetic element, wherein at least one of the word line or the bit line comprises a magnetic sidewall comprising multiple layers, and the multiple layers of the magnetic sidewall are discontinuous along an extension direction of the word line or the bit line.

12. The memory device of claim 11, wherein the multiple layers comprise an inner layer, an outer layer, and a middle layer sandwiched between the inner layer and the outer layer.

13. The memory device of claim 12, wherein the middle layer is magnetic.

14. The memory device of claim 13, wherein the inner layer and the outer layer are non-magnetic.

15. The memory device of claim 11, wherein the magnetic sidewall comprises portions located at those sections that are proximate the switchable magnetic element of the at least one word line and bit line.

16. The memory device of claim 15, wherein the portions are rectangular.

17. The memory device of claim 16, wherein each of the portions has an aspect ratio of 1.

18. The memory device of claim 17, wherein each of the portions has a thickness that is less than 10 nm.