Strain sensor element and blood pressure sensor

• US 9,999,356 B2
• Filed: 07/30/2015
• Issued: 06/19/2018
• Est. Priority Date: 09/30/2010
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Giddings, Alexander Devin, Fukuzawa, Hideaki, Fuji, Yoshihiko, Yuasa, Hiromi, Hara, Michiko, Murakami, Shuichi
• Primary Examiner(s): Patel, Harshad R
• Assistant Examiner(s): WILLIAMS, JAMEL E
• Application Number:
  US14/813,783
• Publication Number:
  US 20150338292A1
• Time in Patent Office: 1,055 Days
• CPC Class Codes: A61B 5/021 Measuring pressure in heart or blood vessels A61B5/0205 takes precedence
• CPC Class Codes: A61B 5/02108 from analysis of pulse wave characteristics
• CPC Class Codes: G01B 7/24 using change in magnetic properties
• CPC Class Codes: G01L 1/125 by using magnetostrictive means magnetostrictive sensors H10N35/101

Abstract

A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

Claims

1. A strain sensor element comprising:

a laminated film provided above a substrate,

the laminated film comprising;

a free layer which has a perpendicular magnetic anisotropy, wherein the free layer has a first magnetization;

a reference layer comprising a second magnetization; and

a spacer layer provided between the free layer and the reference layer; and

a pair of electrodes configured to cause a current to flow through the laminated film,

wherein a rotation angle of the first magnetization of the free layer in response to a distortion of the substrate is different from a rotation angle of the second magnetization of the reference layer in response to the distortion of the substrate.

2. The element according to claim 1,

wherein the free layer comprises a ferromagnetic material, and

wherein an absolute value of a magnetostriction coefficient of the free layer is larger than 10⁻

6.

3. The element according to claim 1,

wherein the free layer comprises an Mp layer and an Ml layer, and

wherein the Mp layer comprises a magnetic material which shows perpendicular magnetic anisotropy, and the Ml layer comprises a magnetic material which shows an absolute value of a magnetistriction coefficient of larger than 10⁻

4.

4. The element according to claim 3,

wherein the Mp layer comprises at least one of:

a TbFe layer,

a (Co/Ni) multilayer,

a (Co/Pd) multilayer,

a (Co/Pt) multilayer,

a (Co/Ir) multilayer,

a FePt layer,

a CoPt layer,

a CoPt—

SiO₂ granular layer, or

a CoFeB layer which is thinner than 1 nm.

5. The element according to claim 3,

wherein the Ml layer comprises at least one of:

TbFe,

SmFe,

DyFe,

FeSiB,

FeOx (0<

x<

80),

CoOx (0<

x<

80),

NiOx (0<

x<

80), or

Ni.

6. The element according to claim 1,

wherein the free layer further comprises a layer of CoFeB or CoFe at an interface with the spacer layer.

7. The element according to claim 1,

wherein the one of the pair of electrodes, the reference layer, the spacer layer, and the free layer are arranged on the substrate in this order.

8. The element according to claim 1, further comprising:

first and second ferromagnetic layers which sandwich the reference layer therebetween.

9. The element according to claim 1, further comprising:

a non-magnetic layer, a ferromagnetic layer, and an antiferromagnetic layer disposed between the reference layer and the substrate, the non-magnetic layer being disposed adjacent to the reference layer, the anti-ferromagnetic layer being disposed adjacent to the substrate, the ferromagnetic layer being sandwiched between the non-magnetic layer and the antiferromagnetic layer.

10. The element according to claim 1,

wherein the laminated film is elongated in one direction.

11. The element according to claim 1, further comprising:

a first ferromagnetic layer disposed between the free layer and the spacer layer; and

a second ferromagnetic layer disposed between the spacer layer and the reference layer.

12. The element according to claim 1,

wherein the substrate has

a circular shape,

a square shape, or

a rectangle shape.

13. The element according to claim 1, further comprising:

a button provided on the other one of the pair of electrodes.

14. The element according to claim 1,

wherein the substrate comprises Si, and

wherein a part of the substrate is made thinner compared with an other part to thereby function as a membrane.

15. The element according to claim 1,

wherein the substrate is made of polymer material.

16. The element according to claim 1,

wherein the strain sensor element comprising a plurality of strain sensor elements, each strain sensor element comprising the laminated film.

17. A blood pressure sensor comprising:

a strain sensor element comprising;

a laminated film provided above a substrate,

the laminated film comprising;

a free layer which has a perpendicular magnetic anisotropy, wherein the free layer has a first magnetization;

a reference layer comprising a second magnetization;

a spacer layer provided between the free layer and the reference layer; and

a pair of electrodes configured to cause a current to flow through the laminated film,

wherein a rotation angle of the first magnetization of the free layer in response to a distortion of the substrate is different from a rotation angle of the second magnetization of the reference layer in response to the distortion of the substrate.

18. The sensor according to claim 17,

wherein the free layer further comprises an Ml layer, and

wherein the Ml layer comprises a magnetic material which shows an absolute value of a magnetistriction coefficient of larger than 10⁻

4.

19. The sensor according to claim 18,

wherein the Ml layer comprises at least one of:

TbFe,

SmFe,

DyFe,

FeSiB,

FeOx (0<

x<

80),

CoOx (0<

x<

80),

NiOx (0<

x<

80), and

Ni.

20. A strain sensor element comprising:

a laminated film provided above a substrate,

the laminated film comprising;

a free layer which comprises an Mp layer, wherein the free layer has a first magnetization;

a reference layer comprising a second magnetization;

a spacer layer provided between the free layer and the reference layer; and

a pair of electrodes configured to cause a current to flow through the laminated film,

wherein a rotation angle of the first magnetization of the free layer in response to a distortion of the substrate is different from a rotation angle of the second magnetization of the reference layer in response to the distortion of the substrate,

wherein the Mp layer comprises at least one of;

a TbFe layer,

a (Co/Ni) multilayer,

a (Co/Pd) multilayer,

a (Co/Pt) multilayer,

a (Co/Ir) multilayer,

a FePt layer,

a CoPt layer,

a CoPt—

SiO₂ granular layer, or

a CoFeB layer which is thinner than 1 nm.

21. A blood pressure sensor comprising:

a strain sensor element comprising;

a laminated film provided above a substrate,

the laminated film comprising;

a free layer which comprises an Mp layer, wherein the free layer has a first magnetization;

a reference layer comprising a second magnetization;

a spacer layer provided between the free layer and the reference layer; and

a pair of electrodes configured to cause a current to flow through the laminated film,

wherein a rotation angle of the first magnetization of the free layer in response to a distortion of the substrate is different from a rotation angle of the second magnetization of the reference layer in response to the distortion of the substrate,

wherein the Mp layer comprises at least one of;

a TbFe layer,

a (Co/Ni) multilayer,

a (Co/Pd) multilayer,

a (Co/Pt) multilayer,

a (Co/Ir) multilayer,

a FePt layer,

a CoPt layer,

a CoPt—

SiO₂ granular layer, or

a CoFeB layer which is thinner than 1 nm.