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Process for PECVD of silicon oxide using TEOS decomposition

  • US RE36,623 E
  • Filed: 12/02/1996
  • Issued: 03/21/2000
  • Est. Priority Date: 12/19/1986
  • Status: Expired due to Term
First Claim
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1. In a process for depositing silicon dioxide onto a substrate by exposing the substrate to plasma formed from a gas mixture which includes tetraethylorthosilicate, the steps of:

  • positioning the substrate on a support within a vacuum chamber and adjacent a gas manifold which is an RF electrode and includes a multiplicity of closely-spaced gas outlet holes closely adjacent the substrate; and

    communicating the gas mixture into the manifold while applying RF energy between the manifold and the substrate support and maintaining the total pressure in the chamber within the range of about 1 to 50 torr and the temperature of the substrate in the range of about 200°

    .[.C..]. .Iadd.C .Iaddend.to 500°

    .[.C..]. .Iadd.C so that a layer of silicon oxide is deposited onto the substrate at a deposition rate greater than 400 angstroms per minute, said silicon oxide layer quality and step coverage being adequate for VLSI semiconductor fabrication..Iaddend.

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