Semiconductor wire bonding method

• US RE37,396 E1
• Filed: 09/26/1996
• Issued: 10/02/2001
• Est. Priority Date: 05/07/1993
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Fogal, Rich
• Primary Examiner(s): Heinrich, Samuel M.
• Application Number:
  US08/721,505
• Time in Patent Office: 1,832 Days
• Field of Search: 228/103, 228/105, 228/180.5, 228/9, 228/10
• US Class Current: 228/103
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/85 using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/14 Integrated circuits

Abstract

An improved method for teaching the location of a bond site on a selected lead finger of a semiconductor leadframe during a wire bonding process is provided. Initially, the location of the lateral edges and terminal edge of a tip portion of the lead finger is sensed by an automated vision system of a wire bonding apparatus. A width (W) and a longitudinal axis of the lead finger are then determined. The bond site is located along the longitudinal axis a predetermined distance of (W/2) from the terminal edge of the lead finger. The improved method allows greater accuracy in the placement of bond sites and precisely controls the length of the bond wire used during the wire bonding process.

Claims

1. In a wire bonding process, in which a bond wire is bonded to bond pads formed on a semiconductor die and then to a bond site located on a tip portion of a lead finger of a semiconductor leadframe, utilizing an automated wire bonding apparatus, a method for teaching a location of the bond site on the lead finger, said method comprising the steps of:

sensing a location of the lateral edge and a terminal edge of the tip portion of the lead finger using an automated vision sensing system of the wire bonding apparatus;

determining a location of a longitudinal axis of the tip portion of the lead finger; and

then

locating the bond site on the lead finger along the longitudinal axis of the lead finger and spaced by a predetermined distance from the terminal edge.

2. The method as recited in claim 1 and wherein the location of the longitudinal axis of the tip portion of the lead finger is determined by determining the width “

W”

of the lead finger and then dividing by two.

3. The method as recited in claim 2 and wherein the predetermined distance is equal to “

W/2”

.

4. The method as recited in claim 3 and wherein the wire bonding apparatus is an existing wire bonding apparatus having software modified to determine the location of the longitudinal axis and locate the bond site.

5. A wire bonding method for semiconductor manufacture comprising:

providing a semiconductor die having a plurality of bond pads thereon connected to integrated circuits formed on the die;

providing a semiconductor leadframe having a plurality of generally rectangular shaped die mounting paddles each surrounded by an arrangement of lead fingers, each of said lead fingers including a tip portion located at a proximal end thereof with a terminal edge of each tip portion generally parallel to a side of a mounting paddle;

attaching the die to a mounting paddle;

bonding a fine bond wire to a bond pad of the die using a bonding tool of an automated wire bonding apparatus having an automated vision system for sensing a location of the die and lead fingers;

determining a width (W) of the tip portion of a selected lead finger and a longitudinal axis of the selected lead finger using the automated vision system;

locating a bond site on the tip portion of the selected lead finger generally along the longitudinal axis and spaced from the terminal edge of the selected lead finger by a predetermined distance; and

bonding the fine bond wire to the selected lead finger at the bond site using the bonding tool.

6. The bonding method as recited in claim 5 and wherein the predetermined distance is equal to the width (W) of the tip portion of the selected lead finger divided by two (W/2).

7. The bonding method as recited in claim 6 and wherein the wire bonding apparatus includes a computer control system operated by computer software.

8. The bonding method as recited in 7 and wherein the wire bonding apparatus is an existing apparatus and the computer software is modified for determining the width (w) and longitudinal axis of the tip portion of the selected lead finger and for locating the bond site the predetermined distance (W/2) from the terminal edge.

9. In semiconductor manufacture, a method for wire bonding a bond pad on a die to a bond site located on a tip portion of a selected lead finger of a leadframe, said method comprising:

providing a semiconductor leadframe having a plurality of generally rectangular shaped die mounting paddles each surrounded by an arrangement of lead fingers, each of said lead fingers including a tip portion located at a proximal end thereof having generally parallel lateral edges and a terminal edge generally parallel to a side of a mounting paddle;

sensing the location of the lateral edges and terminal edge of the selected lead finger and determining the location of a longitudinal axis of the selected lead finger; and

locating the bond site along the longitudinal axis and spaced from the terminal edge by a predetermined distance.

10. The method as recited in claim 9 and wherein the predetermined distance is equal to the width of the tip portion of the selected lead finger divided by two.

11. A semiconductor device wire bonding method, comprising:

12. The bonding method as recited in claim 11 and wherein the distance by which the bond site is spaced from the terminal edge of the selected lead finger is equal to the width (W) of the tip portion of the selected lead finger as determined divided by two (W/2).

13. In a wire bonding process, in which a bond wire is bonded to bond pads formed on a semiconductor die and then to a bond site located on a tip portion of a lead finger of a semiconductor leadframe, utilizing an automated wire bonding apparatus, a method for teaching a location of the bond site on the lead finger, said method comprising the steps of:

14. The method as recited in claim 13 and wherein the automated wire bonding apparatus is an existing wire bonding apparatus having software modified to determine the location of the longitudinal axis and locate the bond site.

15. In semiconductor manufacture, a method for wire bonding a bond pad on a die to a bond site located on a tip portion of a selected lead finger of a leadframe, said method comprising:

16. A process for bonding a wire to a bond site located on a tip portion of a lead finger of a semiconductor leadframe, comprising:

17. A method for bonding a wire to a bond site located on a tip portion of a selected lead finger of a leadframe, comprising:

18. A process for bonding a wire to a bond site located on an end portion of a conductor of a carrier for a semiconductor die, comprising:

19. The method as recited in claim 18, further comprising: