Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
First Claim
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1. A process monitor for determining process parameters during a plasma etch process of a water, the process monitor comprising:
- a flash lamp emitting a broad-band optical radiation;
a spectrograph responsive to optical radiation reflected from the wafer; and
a data processing element for processing a first signal from the spectrograph, the first signal representative of emitted optical radiation reflected from the wafer, and determining a process parameter.
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Abstract
An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.
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Citations
31 Claims
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1. A process monitor for determining process parameters during a plasma etch process of a water, the process monitor comprising:
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a flash lamp emitting a broad-band optical radiation;
a spectrograph responsive to optical radiation reflected from the wafer; and
a data processing element for processing a first signal from the spectrograph, the first signal representative of emitted optical radiation reflected from the wafer, and determining a process parameter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A process monitor for determining process parameters during a plasma deposition process of a wafer, the process monitor comprising:
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a flash lamp emitting a broad-band optical radiation;
a spectrograph responsive to optical radiation reflected from the wafer; and
a data processing element for processing a first signal from the spectrograph, the first signal representative of emitted optical radiation reflected from the wafer, and determining a process parameter. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of monitoring a process and for determining process parameters during a plasma process of a wafer, the method comprising:
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providing a flash lamp emitting a broad-band optical radiation;
providing a spectrograph responsive to optical radiation reflected from the wafer; and
providing a data processing element for processing a first signal from the spectrograph, the first signal representative of emitted optical radiation reflected from the wafer, and determining a process parameter. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification