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Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source

  • US RE39,145 E1
  • Filed: 06/26/2003
  • Issued: 06/27/2006
  • Est. Priority Date: 09/30/1999
  • Status: Expired due to Term
First Claim
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1. A process monitor for determining process parameters during a plasma etch process of a water, the process monitor comprising:

  • a flash lamp emitting a broad-band optical radiation;

    a spectrograph responsive to optical radiation reflected from the wafer; and

    a data processing element for processing a first signal from the spectrograph, the first signal representative of emitted optical radiation reflected from the wafer, and determining a process parameter.

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