Acceleration sensor and process for the production thereof

• US RE40,347 E1
• Filed: 04/17/2002
• Issued: 06/03/2008
• Est. Priority Date: 04/27/1992
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US10/123,220
• Time in Patent Office: 2,239 Days
• Field of Search: 735/141.6, 735/143.2, 735/141.8, 735/143.6
• US Class Current: 73/514.18
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0817 for pivoting movement of the mass, e.g. in-plane pendulum

Abstract

A single crystal silicon substrate (1) is bonded through an SiO₂ film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are respectively, coated with an SiO₂ film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

Claims

1. An acceleration sensor comprising:

a first substrate formed of a silicon material which is used as a conductive material;

a second substrate provided on the lower side of said first substrate and electrically insulated from the first substrate;

said first substrate including;

a support beam having a mass portion forming capacitive electrodes for displacement in a parallel direction to a surface of said second substrate according to the degree of acceleration, a fixed portion for fixing said support beam to said second substrate and a support portion for intermediately supporting said mass portion to said fixed portion,

an insulating groove extending through a thickness of said first substrate around the entire periphery of said support beam, and stationary blocks forming capacitive electrodes defined by said insulating groove on the outer sides of said support beam separately across said insulating groove and fixed to said second substrate; and

gap means forming a gap space in order to space said mass portion and said supporting portion from a surface of said second substrate; and

said second substrate being separated from said first substrate by an insulating layer which is at least provided on the lower side of said fixed portion and stationary blocks.

2. An acceleration sensor as defined in claim 1, wherein said insulating groove defines a narrow detection groove between said mass portion of said support beam and each of said stationary blocks, and movable and stationary electrodes are formed on lateral side surfaces of said support beam and said stationary blocks in face to face relation with each other across said detection groove.

3. An acceleration sensor as defined in claim 1, wherein said support beam is securely fixed to said second substrate at said fixed end, and reduced in a width in said support portion to provide at least one support for said mass portion in a fore free end portion to be displayed horizontally according to the degree of acceleration in the fashion of at least one fulcrum point type acceleration sensor.

4. An acceleration sensor as defined in claim 3, wherein said width of said support portion is smaller than a thickness of said fixed portion and said support beam provides a cantilever type support.

5. An acceleration sensor as defined in claim 1, wherein said first substrate is formed of silicon material with a (100) crystal face.

6. An acceleration sensor as defined in claim 5, wherein said first substrate is formed of a n-type silicon material.

7. An acceleration sensor as defined in claim 1, wherein said second substrate is formed of a silicon material having a surface covered with an insulating oxidation film.

8. An acceleration sensor comprising:

a substrate which is selected from the group consisting of an insulating material and oxidized semiconductor material;

a support beam which includes a mass portion forming a predetermined mass and first capacitive electrodes on side surfaces of said mass portion, a fixed portion for fixing said support beam to said substrate and thin support portion for intermediately connecting between said mass portion and said fixed portion;

a pair of stationary blocks arranged on both sides of said support beam separately across an air gap and fixed to said substrate, said stationary blocks provided with second capacitive electrodes on the opposite sides of first capacitive electrodes of said mass portion;

gap means forming a gap space in order to space said mass portion and thin support portion from a surface of said substrate; and

said mass portion being displace in a parallel direction to the surface of said substrate according to the degree of acceleration and said support beam and stationary blocks formed of a silicon material which is used as a conductive material and electrically insulated from said substrate.

9. An acceleration sensor as defined in claim 8, wherein said gap means is formed of an insulating layer at least between said substrate and said fixed portion of the support beam and said stationary blocks.

10. An acceleration sensor as defined in claim 8, wherein movable and stationary electrodes are formed on lateral side surfaces of said mass portion and said stationary blocks in face to face relation with each other across air gap.

11. An acceleration sensor as defined in claim 8, wherein a width of said thin support portion is smaller than a thickness of said fixed portion.

12. An acceleration sensor as defined in claim 8, wherein said support beam and stationary blocks are formed of a n-type silicon material with a (100) crystal face.

13. An acceleration sensor as defined in claim 8, wherein said substrate is formed of a silicon material having a surface covered with an insulating oxidation film.

14. An acceleration sensor comprising:

A. a first single crystalline silicon substrate having a first surface and a second surface opposite said first surface;

B. a second single crystalline silicon substrate connected to a side of said first surface of said first single crystalline silicon substrate with an insulating layer interposed therebetween;

C. said first single crystalline silicon substrate including;

i. a movable beam defined by a trench which is disposed to surround said movable beam and extend from said second surface to said first surface, said movable beam being supported by said second single crystalline silicon substrate through said insulating layer to be displaceable in a direction parallel to said first surface of said first single crystalline silicon substrate,

ii. a stationary block disposed to be spaced apart from said movable beam via said trench, facing said movable beam to form a pair of capacitive electrodes with said movable beam, and fixed to said second single crystalline silicon substrate; and

D. a signal-processing circuit element for carrying out a processing operation based on a change of a capacitance between said capacitive electrodes.

15. An acceleration sensor as defined in claim 14, wherein said movable beam has a first thickness along said direction parallel to said first surface of said first single crystal silicon substrate and a second thickness in a direction perpendicular to said first surface of said first crystal silicon substrate, said first thickness being smaller than said second thickness.

16. An acceleration sensor as defined in claim 14, wherein at least one of a surface of said movable beam exposed to said trench and a surface of said first single crystal silicon substrate facing and movable beam is covered with an insulator.

17. An acceleration sensor as defined in claim 14, wherein said movable beam or said stationary block comprise an impurity-doped region to form said capacitive electrodes.

18. An acceleration sensor as defined in claim 14, further comprising first, second and third stationary blocks, each of which is formed of a part of said first single crystal silicon substrate, and wherein said movable beam includes a first branch and a second branch, said first branch being interposed between said stationary block and said first stationary block with a first air gap defined therebetween, said second branch of said movable beam being interposed between said second and said third stationary blocks with a second air gap defined therebetween, said stationary block and said second stationary block being electrically connected with each other, said first and said third stationary blocks being electrically connected with each other.

19. An acceleration sensor according to claim 14, wherein said signal-processing circuit is disposed on said first single crystal silicon substrate.

20. An acceleration sensor comprising:

A. a first single crystalline silicon substrate having a first surface and a second surface opposite said first surface;

B. a second single crystalline silicon substrate connected to a side of said first surface of said first single crystalline silicon substrate with an insulating layer interposed therebetween;

C. said first single crystalline silicon substrate being divided by a trench extending from said second surface to said first surface;

i. a movable beam portion surrounded by said trench, said movable beam portion being supported by said second single crystalline silicon substrate through said insulating layer to be displaceable in a direction parallel to said first surface of said first single crystalline silicon substrate, said movable beam portion having a movable electrode,

ii. a stationary portion disposed to be spaced apart from said movable beam via said trench, having a stationary electrode which faces said movable beam via said trench to form a pair of capacitive electrodes with said movable electrode, and fixed to said second single crystalline silicon substrate; and

D. an insulator covering at least one of a surface of said movable electrode and a surface of said stationary electrode.

21. An acceleration sensor as defined in claim 20, further comprising a signal-processing circuit defined in the first single crystal silicon substrate for carrying out a processing operation based on a change of a capacitance between said movable electrode and said stationary electrode.

22. A semiconductor capacitor-type sensor comprising:

a first layer formed of a silicon material which is used as a conductive material, a second layer provided under said first layer;

said first layer including;

a support beam having a mass portion forming capacitive electrodes for displacement in a substantially parallel direction to a surface of said second layer according to the degree of mechanical force, a fixed portion for fixing said support beam to said second layer and a support portion for intermediately supporting said mass portion to said fixed portion;

an insulating groove extending through a thickness of said first layer around said support beam;

a stationary block forming capacitive electrodes defined by said insulating groove and fixed to said second layer; and

wiring layers formed on said stationary block and said support beam;

wherein

said second layer is separated from said first layer by an insulating layer; and

said wiring layers have an air bridge structure over said insulating groove.

23. The sensor according to claim 22, wherein said insulating layer is provided on the lower side of said fixed portion.

24. A semiconductor capacitance-type sensor as defined in claim 22, wherein said insulating groove defines a narrow detection groove between said mass portion of said support beam and said stationary block, and movable and stationary electrodes are formed on lateral side surfaces of said support beam and said stationary block in face to face relation with each other across said detection groove.

25. A semiconductor capacitance-type sensor as defined in claim 22, wherein said support beam is securely fixed to said second layer at a fixed end, and reduced in a width in said support portion to provide at least one support for said mass portion in a fore free end portion to be displayed horizontally according to the degree of mechanical force in the fashion of at least one fulcrum point type mechanical sensor.

26. A semiconductor capacitance-type sensor as defined in claim 25, wherein said width of said support portion is smaller than a thickness of said support beam.

27. A semiconductor capacitance-type sensor as defined in claim 22, wherein said first layer is formed of silicon material with a (100) crystal face.

28. A semiconductor capacitance-type sensor as defined in claim 27, wherein said first layer is formed of a n-type silicon material.

29. A semiconductor capacitance-type sensor as defined in claim 22, wherein said second layer is formed of a silicon material having a surface covered with an insulating oxidation film.

30. Semiconductor capacitance-type sensor according to claim 22, wherein said support beam has a first thickness along said direction parallel to a surface of said first layer and a second thickness in a directional perpendicular to said surface of said first layer, said first thickness being smaller than said second thickness.

31. An acceleration sensor according to claim 22, wherein said support beam or said stationary block comprise an impurity-doped region to form said capacitive electrodes.

32. An acceleration sensor according to claim 22, wherein said stationary block includes first, second, third and fourth blocks, each of which is formed of a part of said first layer, and said support beam includes a first branch and a second branch, said first branch being interposed between said first block and said second block with a first air gap defined therebetween, said second branch being interposed between said third block and said fourth block with a second air gap defined therebetween, said first block and said third block being electrically connected with each other, said second block and said fourth block being electrically connected with each other.

33. A semiconductor capacitor-type sensor comprising:

a first layer formed of a silicon material which is used as a conductive material, a second layer provided under said first layer;

said first layer including;

a support beam having a mass portion forming capacitive electrodes for displacement in a substantially parallel direction to a surface of said second layer according to the degree of mechanical force, a fixed portion for fixing said support beam to said second layer and a support portion for intermediately supporting said mass portion to said fixed portion;

an insulating groove extending through a thickness of said first layer around said support beam;

a stationary block forming capacitive electrodes defined by said insulating groove and fixed to said second layer; and

wiring layers formed from said stationary block and said support beam;

wherein

said second layer being separated from said first layer by an insulating layer; and

said wiring layers have an air bridge structure over said insulating groove.