Bi mode ion implantation with non-parallel ion beams
First Claim
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1. A method for implanting ions into a workpiece, comprising the steps of:
- generating an ion beam;
measuring an angle of non-parallelism of the ion beam;
performing a first implant with the workpiece oriented at a first angle; and
performing a second implant with the workpiece oriented at a second angle, wherein the first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism.
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Abstract
A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilting the wafer at a second angle, and performing a second implant at the second angle. The first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. Preferably, the first and second implants are controlled to provide substantially equal ion doses in the workpiece.
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Citations
51 Claims
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1. A method for implanting ions into a workpiece, comprising the steps of:
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generating an ion beam;
measuring an angle of non-parallelism of the ion beam;
performing a first implant with the workpiece oriented at a first angle; and
performing a second implant with the workpiece oriented at a second angle, wherein the first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for implanting ions into a semiconductor wafer, comprising the steps of:
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generating an in ion beam;
measuring an angle of non-parallelism of the ion beam;
tilting the wafer at a first angle;
performing a first implant at the first angle;
tilting the wafer at a second angle; and
performing a second implant at the second angle, wherein the first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. Apparatus for implanting ions into a semiconductor wafer, comprising:
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means for generating an ion beam;
means for measuring an angle of non-parallelism of the ion beam;
means for tilting the wafer at a first angle;
means for performing a first implant at the first angle;
means for tilting the wafer at a second angle; and
means for performing a second implant at the second angle, wherein the first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism.
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22. A method for implanting ions into a semiconductor wafer, comprising the steps of:
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generating an ion beam;
tilting the wafer at a first angle with respect to the ion beam;
performing a first implant with the wafer tilted at the first angle;
tilting the wafer at a second angle that is equal in magnitude and opposite in sign with respect to said first angle; and
performing a second implant with the wafer tilted at the second angle, wherein the step of tilting the wafer at the first angle comprises tilting the wafer at a half angle of divergence of the ion beam. - View Dependent Claims (23, 24)
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25. Apparatus for implanting ions into a semiconductor wafer, comprising:
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an ion beam generator;
a measuring system for measuring an angle of non-parallelism of the ion beam; and
a tilt mechanism for tilting the semiconductor wafer at first and second angles, wherein the first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism, wherein first and second implants are performed at the first and second angles, respectively. - View Dependent Claims (26, 27, 28)
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29. A method for implanting ions into a workpiece, comprising:
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generating an ion beam;
performing a first implant with the workpiece oriented at a first angle relative to a reference direction; and
performing a second implant with the workpiece oriented at a second angle relative to the reference direction, wherein the first and second angles are opposite in sign with respect to the reference direction, and wherein the reference direction is a selected implant angle with respect to the workpiece. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37)
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38. A method for implanting ions into a semiconductor wafer, comprising:
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generating an ion beam;
tilting the wafer at a first angle relative to a reference direction;
performing a first implant at the first angle;
tilting the wafer at a second angle relative to the reference direction; and
performing a second implant at the second angle, wherein the first and second angles are opposite in sign with respect to the reference direction, and wherein the reference direction is a selected implant angle with respect to the wafer. - View Dependent Claims (39, 40, 41, 42, 43, 44)
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45. Apparatus for implanting ions into a semiconductor wafer, comprising:
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an ion beam generator; and
a tilt mechanism for tilting the semiconductor wafer at first and second angles, wherein the first and second angles are opposite in sign with respect to a reference direction, wherein first and second implants are performed at the first and second angles, respectively, and wherein the reference direction is a selected implant angle with respect to the wafer. - View Dependent Claims (46, 47, 48, 49, 50)
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51. Apparatus for implanting ions into a semiconductor wafer, comprising:
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means for generating an ion beam;
means for tilting the wafer at first and second angles; and
means for performing first and second implants at the first and second angles, respectively, wherein the first and second angles are opposite in sign with respect to a reference direction, and wherein the reference direction is a selected implant angle with respect to the wafer.
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Specification