Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced
First Claim
1. A process for manufacturing an accelerometric and gyroscopic integrated sensor, comprising the steps of:
- forming a sacrificial region on in a substrate of semiconductor material;
growing an epitaxial layer on said substrate and said sacrificial region;
and removing selective portions of said epitaxial layer and said sacrificial region to form a movable mass surrounded at the sides and separated from fixed regions by trenches and separated from said substrate by an air gap, the movable mass supported by anchorage zones only at the sides;
and forming a weighting region of tungsten at said movable mass.
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Abstract
A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
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Citations
20 Claims
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1. A process for manufacturing an accelerometric and gyroscopic integrated sensor, comprising the steps of:
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forming a sacrificial region on in a substrate of semiconductor material;
growing an epitaxial layer on said substrate and said sacrificial region;
andremoving selective portions of said epitaxial layer and said sacrificial region to form a movable mass surrounded at the sides and separated from fixed regions by trenches and separated from said substrate by an air gap, the movable mass supported by anchorage zones only at the sides;
andforming a weighting region of tungsten at said movable mass. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for producing an integrated sensor comprising the steps of:
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forming a sacrificial support layer on in a semiconductor substrate;
forming an epitaxial layer on the sacrificial support layer and on the semiconductor substrate;
depositing a tungsten layer weighting region on the epitaxial layer;
removing the sacrificial support layer; and
forming a movable mass from portions of the epitaxial layer and tungsten layers the weighting region by forming trenches to separate the movable mass from fixed regions of the epitaxial layer and tungsten layers weighting region and separated from said substrate by an air gap, the movable mass thereby supported by anchorage zones only at the sides. - View Dependent Claims (11, 12, 13)
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14. A process for manufacturing an accelerometric and gyroscopic integrated sensor, comprising the steps of:
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forming a sacrificial region in a substrate of semiconductor material;
growing an epitaxial layer on said substrate and said sacrificial region; and
removing selective portions of said epitaxial layer and said sacrificial region to form a movable mass surrounded at the sides and separated from fixed regions by trenches and separated from said substrate by an air gap, the movable mass supported by anchorage zones only at the sides; and
forming a weighting region of a metal at said movable mass. - View Dependent Claims (15)
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16. A method for producing an integrated sensor comprising the steps of:
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forming a sacrificial support layer in a semiconductor substrate;
forming an epitaxial layer in the sacrificial support layer and on the semiconductor substrate;
depositing a metal layer on the epitaxial layer;
removing the sacrificial support layer; and
forming a movable mass from portions of the epitaxial layer and the metal layer by forming trenches to separate the movable mass from fixed regions of the epitaxial layer and weighting region and separated from said substrate by an air gap, the movable mass thereby supported by anchorage zones only at the sides. - View Dependent Claims (17)
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18. A process for manufacturing an accelerometric and gyroscopic integrated sensor, comprising the steps of:
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forming a sacrificial region on a substrate of semiconductor material;
growing an epitaxial layer on said substrate and said sacrificial region;
removing selective portions of said epitaxial layer and said sacrificial region to form a movable mass surrounded at the sides and separated from fixed regions by trenches and separated from said substrate by an air gap, the movable mass supported by anchorage zones only at the sides; and
forming a weighting region at said movable mass, wherein a step of forming a nucleus region of non-single-crystal semiconductor material on said sacrificial region is carried out before said step of growing an epitaxial layer and wherein said step of growing an epitaxial layer comprises the step of growing a multi-crystal region on said nucleus region and growing a single-crystal region on said substrate, and wherein said suspended mass is formed in said multi-crystal region and wherein the process comprises the step of forming electronic components in said single-crystal region. - View Dependent Claims (19, 20)
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Specification