Dynamical quantity sensor
First Claim
1. A dynamic quantity sensor comprising:
- fista first electrode formed by selectively etching a semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity;
a second electrode formed by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and being movable in a direction parallel to a surface of the semiconductor substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and
a third electrode formed at a position opposite to the first and second electrodes by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and detecting the movement of at least one of the first and second electrodes.
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Accused Products
Abstract
This invention provides a dynamical quantity sensor having a novel structure, wherein first beams 3, 4, 5, 6 are extended from side walls of a recess 2 of a substrate 1, and an intermediate support member 7 is disposed on the first beams 3, 4, 5, 6. Second beams 8, 9, 10, 11 extending in a direction crossing substantially perpendicularly the first beams 3, 4, 5, 6 are disposed on the intermediate support member 7, and a weight 12 is disposed on the second beams 8, 9, 10, 11. Opposing electrodes 17 and 19 and opposing electrodes 18 and 20 are used as electrodes for excitation, and opposing electrodes 13 and 15 and opposing electrodes 14 and 16 are used as electrodes for detecting an angular velocity. The movement of the weight 12 resulting from the application of the angular velocity is detected.
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Citations
30 Claims
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1. A dynamic quantity sensor comprising:
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fista first electrode formed by selectively etching a semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity; a second electrode formed by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and being movable in a direction parallel to a surface of the semiconductor substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and a third electrode formed at a position opposite to the first and second electrodes by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and detecting the movement of at least one of the first and second electrodes. - View Dependent Claims (2, 3)
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4. A dynamical quantity sensor comprising:
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a fixed portion consisting of a semiconductor layers layer; a first electrode formed on the fixed portion; a first movable plate supported at the fixed portion by a plurality of beam portions elongated from the fixed portion, and being movable in a direction horizontal to a surface of the fixed portion; and a second electrode formed on a position opposite to the first electrode in the first movable plate; wherein the first movable plate comprises; a plurality of coupling points to couple the plurality of beam portions elongated from the fixed portion; a first weight disposed in an inner area surrounded by the plurality of coupling points; and a second weight fixed to the first weight and an outer area of the plurality of coupling points; and
wherein the change of the capacitance between the first and second electrodes is detected so that a dynamical quantity acting on the first movable plate is detected. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12)
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13. A dynamical quantity sensor comprising:
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a semiconductor substrate; a first electrode being movable in a direction parallel to a surface of the substrate in accordance with the action of a dynamical quantity; a second electrode being movable in the direction parallel to the surface of the substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and a third electrode formed on a position opposite to the first and second electrodes, and detecting the movement of at least one of the first and second electrodes; wherein the first, second and third electrodes are formed by selectively etching the substrate so as to penetrate in a direction of thickness of the substrate. - View Dependent Claims (14, 15)
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16. A dynamical quantity sensor comprising:
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a fixed portion consisting of a semiconductor layer; a first electrode formed on the fixed portion; a first movable plate supported at the fixed portion by a plurality of first beam portions elongated from the fixed portion, and being movable in a an X-axis direction horizontal to a surface of the fixed portion, the first beam portions being deflectable in the X-axis direction;
anda second electrode formed on a position opposite to the first electrode in the first movable plate;
anda second movable plate connected to the first movable plate via a plurality of second beam portions elongated from the first movable plate, and being movable in a Y-axis direction perpendicular to the X-axis direction and horizontal to the surface of the fixed portion, wherein the second movable plate is oscillated in the Y-axis direction by using an electrostatic force, and Coriolis force acting on the second movable plate is transmitted to the first movable plate via the second beam portions, and wherein the change of capacitance between the first and second electrodes along the X-axis direction is detected so that a dynamical quantity acting on the first movable plate which corresponds to the Coriolis force acting on the second movable plate is detected. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A dynamical quantity sensor comprising:
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a semiconductor substrate; a first electrode being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity;
anda second electrode formed on a position opposite to the first electrode, and detecting the movement of the first electrode; a first movable plate in which the first electrode is provided and is movable in an X-axis direction horizontal to a surface of the semiconductor substrate; a second movable plate connected to the first movable plate via a plurality of beams, and being movable in a Y-axis direction perpendicular to the X-axis direction and horizontal to the surface of the semiconductor substrate; and a drive mechanism, including a capacitor, oscillating the second movable plate in the Y-axis direction by using an electrostatic force provided by the capacitor, whenwherein the first and second electrodes are formed by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the semiconductor substrate, wherein Coriolis force acting on the second movable plate is detected by using changes in capacitance between the first and second electrodes. - View Dependent Claims (26, 27)
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28. A dynamic quantity sensor comprising:
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a semiconductor substrate; a first electrode being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity; and a second electrode being movable in a direction parallel to a surface of the semiconductor substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and a third electrode formed at a position opposite to the first and second electrodes, and detecting the movement of at least one of the first and second electrodes.
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29. A dynamic quantity sensor comprising:
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a semiconductor substrate; a first electrode being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity;
anda second electrode formed at a position opposite to the first electrode, and detecting the movement of the first electrode; a first movable plate in which the first electrode is provided and is movable in an X-axis direction horizontal to a surface of the semiconductor substrate; a second movable plate connected to the first movable plate via a plurality of beams, and being movable in a Y-axis direction perpendicular to the X-axis direction and horizontal to the surface of the semiconductor substrate; and a drive mechanism, including a capacitor, oscillating the second movable plate in the Y-axis direction by using an electrostatic force provided by the capacitor, wherein Coriolis force acting on the second movable plate along the X-axis direction is transmitted to the first movable plate via the beams and a movement of the first movable plate is detected by using change in capacitance between the first and second electrodes.
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30. A dynamical quantity sensor comprising:
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a first electrode formed by selectively etching a semiconductor substrate so as to penetrate in a direction of thickness of the substrate, and being movable in the direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity; and a second electrode formed at a position opposite to the first electrode by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate; and a surrounding portion surrounding the first electrode and second electrode, wherein a part of the surrounding portion is more thick than the first electrode and second electrode.
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Specification