Semiconductor light emitting device and method for manufacturing the same
First Claim
1. A semiconductor light emitting device comprising:
- a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other,a first electrode connected to the first semiconductor layer, anda second electrode connected to the second semiconductor layer,wherein one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section,wherein said semiconductor stacking structure is formed on or above a support member,wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, andwherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure.
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Abstract
A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure.
The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.
8 Citations
144 Claims
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1. A semiconductor light emitting device comprising:
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a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, wherein said semiconductor stacking structure is formed on or above a support member, wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor light emitting device comprising:
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a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, and wherein one of said first electrode and said second electrode is electrically separated into a plurality of electrode segments on or above said semiconductor stacking structure, wherein said semiconductor stacking structure is formed on or above a support member, wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor light emitting device comprising:
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a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, and wherein one of said first electrode and said second electrode is electrically separated into a plurality of electrode segments, wherein said semiconductor stacking structure is formed on or above a support member, wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure.
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17. A semiconductor light emitting device comprising:
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a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of one of said first and second electrodes has (1) a portion that makes direct contact with a surface of a respective one of said first or second semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, wherein said semiconductor stacking structure is formed on or above a support member, wherein said first electrode and said second electrode are each provided between said support member and respective layers of said semiconductor stacking structure, and wherein said semiconductor light emitting device further comprises a bonding member forming a region that;
(1) extends substantially from one side of the semiconductor light emitting device to the other side of the semiconductor light emitting device;
(2) is above said support member; and
(3) is between confronting surfaces of said support member and said semiconductor stacking structure,said bonding member thereby providing electrical connectivity between said support member and at least one of said first and second electrodes. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144)
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Specification