Support for microelectronic, microoptoelectronic or micromechanical devices

• US RE44,255 E1
• Filed: 04/24/2008
• Issued: 06/04/2013
• Est. Priority Date: 07/20/2001
• Status: Expired due to Term

• Current Assignee: SAES Getters SpA (SAES Getters S)
• Original Assignee: SAES Getters SpA (SAES Getters S)
• Inventors: Amiotti, Marco
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US12/150,287
• Time in Patent Office: 1,867 Days
• Field of Search: 257/682, 257/704, 257/692, 228/124.6, 313/553, 313/495, 313/496, 313/422
• US Class Current: 257/682
• CPC Class Codes: B81C 1/00285 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: C23C 14/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: G01J 5/045 Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements getter arrangements per se H01L23/26 and H01L21/3221
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]

Abstract

The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and discrete deposits of gas absorbing or contaminant removing material on the base by a variety of techniques and a layer for temporary protection of the contaminant removing material on top of the contaminant removing material. Passages are created in the layer which expose the contaminant removing material to atmosphere. The device may be used as a covering for the microdevice as well.

Claims

1. A device for use in manufacturing, comprising a base, wherein said base functions as mechanical support for said device, wherein said device is configured such that on said base a contaminant removing material is deposed in the form of discrete deposits, wherein said discrete deposits are configured to be at least partially exposed to the atmospheric environment of said device and wherein said discrete deposits of contaminant removing material have a thickness within a range from 0.1 to 5 μ

m.

2. The device as recited in claim 1, wherein said device is used in the manufacture of a microdevice selected from the group consisting of:

microelectronic devices (IC), micromechanical devices (MM), and microoptoelectronic devices, wherein said microoptoelectronic devices include IR sensors.

6. The device as recited in claim 1, said base further comprising a layer of a material compatible with the production of microelectronic or micromechanical devices or parts thereof, said layer comprising passages which allow contact between said deposits and said atmospheric environment.

7. The device as recited, in claim 1, wherein said base is configured with one or more hollows wherein said one or more hollows are fitted to comprise said discrete deposits of contaminant removing material.

8. The device as recited in claim 1 wherein said base includes material selected from the group consisting of:

metals, ceramics, glass, and semiconductors.

9. The device as recited in claim 8, wherein said material is silicon.

10. The device as recited in claim 1 wherein said contaminant removing material is a getter material.

11. The device as recited in claim 10 wherein said getter material includes a material selected from the group of metals consisting of:

Zr, Ti, Nb, Ta, V, and alloys of these metals.

12. The device as recited in claim 11 wherein said getter material further comprises a material selected from the group consisting of:

Cr, Mn, Fe, Co, Ni, Al, Y, La and rare-earths.

13. The device as recited in claim 11 characterized in that said getter material is titanium.

14. The device as recited in claim 11 wherein said getter material is zirconium.

15. The device as recited in claim 11 wherein said getter material is an alloy having a weight percentage composition Zr 84%-Al 16%.

16. The device as recited in claim 11 wherein said getter material is an alloy having a weight percentage composition Zr 70%-V 24.6%-Fe 5.4%.

17. The device as recited in claim 11 wherein said getter material is an alloy having a weight percentage composition Zr 80.8%-Co 14.2%-TR 5%, wherein TR is selected from the group consisting of:

rare earths, yttrium, lanthanum and mixtures thereof.

18. The device as recited in claim 1, wherein said contaminant removing material is a drier material.

19. The device as recited in claim 18 wherein said drier material is chosen among the oxides of alkali or alkaline-earth metals.

20. The device as recited in claim 19 wherein said drier material is calcium oxide.

21. The device as recited in claim 1, wherein said discrete deposits of contaminant removing material have a thickness within a range from 0.1 to 5 μ

m.

25. A microdevice in which the device for use in manufacturing recited in claim 1 is used as covering element in the production of a micromechanical device.

3. A device for use in manufacturing, comprising a base, wherein said base functions as mechanical support for said device, said device characterized in that on said base a contaminant removing material is deposed in the form of discrete deposits have a thickness within a range from 0.1 to 5 μ

m, wherein said base is covered with a layer of a material compatible with the production of microelectronic or micromechanical devices or parts thereof, said layer including passages which allow contact between the atmospheric environment of said device and said contaminant removing material.

22. The device recited in claim 3 wherein said material compatible with production of microelectronic, microoptoelectronic or micromechanical devices or parts thereof is a semiconductor material.

23. The device recited in claim 22 wherein said material is silicon.

24. The device recited in claim 3 wherein said layer of material compatible with production of microelectronic, microoptoelectronic or micromechanical devices or parts thereof have a thickness within a range from 1 to 20μ

m.

4. A device for use in manufacture of solid state devices comprising a base, where said base comprises discrete deposits of a contaminant removing material having a thickness within a range from 0.1 to 5 μ

m, where said contaminant removing material is entirely exposed to the atmospheric environment of said device.

5. The device as recited in claim 4, said base further comprising a layer of material compatible with the production of microelectronic or micromechanical devices or parts thereof, said layer comprising passages which allow contact between the atmospheric environment of said device and said contaminant removing material.

26. A device for use in the manufacture of a microdevice comprising:

mechanical support means;

contaminant removal means having a thickness within a range from 0.1 to 5 μ

m deposed on said mechanical support means; and

cover means for said mechanical support means, wherein said cover means is configured with passage means, such that contaminant removal means is exposed to atmosphere through said passage means.

27. A microdevice manufacturing device, comprising:

a base;

a gas absorbing material coupled to the base having a thickness within a range from 0.1 to 5 μ

m;

and

a production process-compatible layer, covering the gas absorbing material, having a plurality of passages realized therein, wherein said passages facilitate atmospheric exposure to the gas absorbing material.

28. The device of claim 27, wherein said gas absorbing material is discretely deposited, and wherein said passages are realized over the discrete deposits.

29. The device of claim 27, wherein said production process-compatible layer adheres to said base.

30. The device of claim 27, wherein said production process-compatible layer acts as an anchor for a microdevice constructed thereon.

31. The device of claim 27, wherein a microdevice is constructed in said production process-compatible layer.