Semiconductor light emitting device with transparent electrode having holes
First Claim
1. A fabrication method of a semiconductor light emitting device comprising:
- providing a substrate;
forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate;
forming a first transparent electrode on the p-type semiconductor layer, said first transparent electrode having holes per a certain region to thereby expose the p-type semiconductor layer;
forming a first pad on the first transparent electrode; and
forming a second transparent electrode on the first transparent electrode.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer. Further, the first transparent electrode is in the shape of columns with gaps therebetween on the second type semiconductor layer, and the second transparent electrode completely covers the first transparent electrode and fills the gaps of the first transparent electrode.
-
Citations
32 Claims
-
1. A fabrication method of a semiconductor light emitting device comprising:
-
providing a substrate; forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate; forming a first transparent electrode on the p-type semiconductor layer, said first transparent electrode having holes per a certain region to thereby expose the p-type semiconductor layer; forming a first pad on the first transparent electrode; and forming a second transparent electrode on the first transparent electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A fabrication method of a semiconductor light emitting device comprising:
-
providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; forming a first pad on the first transparent electrode; and forming a second transparent electrode on the first transparent electrode, wherein the forming a first transparent electrode comprises; forming a first metal layer by depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer; and annealing the first metal layer. - View Dependent Claims (14)
-
-
15. A fabrication method of a semiconductor light emitting device comprising:
-
providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a second transparent electrode on the first transparent electrode, wherein the second transparent electrode comprises a metal oxide. - View Dependent Claims (16)
-
-
17. A fabrication method of a semiconductor light emitting device comprising:
-
providing a substrate; forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate; depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer, and thereby forming a first transparent electrode; forming a first pad on the p-type semiconductor layer; forming holes that expose the p-type semiconductor layer per a certain region on the first transparent electrode; and forming a second transparent electrode on the first transparent electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A fabrication method of a semiconductor light emitting device comprising:
-
providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer, and thereby forming a first transparent electrode; forming a first pad on the p-type semiconductor layer; and forming a second transparent electrode on the first transparent electrode. - View Dependent Claims (28)
-
-
29. A method of fabricating a semiconductor light emitting device, the method comprising:
-
providing a substrate; forming a first type semiconductor layer on the substrate; forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer, wherein the first transparent electrode is in the shape of columns with gaps therebetween on the second type semiconductor layer, wherein the first type semiconductor layer is an n-type semiconductor layer, and the second type semiconductor layer is a p-type semiconductor layer, wherein the second transparent electrode completely covers the first transparent electrode and fills the gaps of the first transparent electrode, and wherein the first transparent electrode includes at least one of a metal and a metal oxide. - View Dependent Claims (30, 31, 32)
-
Specification