Nitride semiconductor device
First Claim
1. A nitride semiconductor device which comprises an active layer containing an n-type impurity and comprising a quantum well layer or layers and a barrier layer or layers between n-type nitride semiconductor layers and p-type nitride semiconductor layers, wherein at least said quantum well layer at the proximate side in said active layer to said n-type nitride semiconductor layers is doped with an n-type impurity and wherein at least said quantum well layer at the proximate side in said active layer to said p-type nitride semiconductor layers is not doped with an n-type impurity.
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Abstract
An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1−xN (0<x<1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5×1016 to 2×1018/cm3.
21 Citations
43 Claims
- 1. A nitride semiconductor device which comprises an active layer containing an n-type impurity and comprising a quantum well layer or layers and a barrier layer or layers between n-type nitride semiconductor layers and p-type nitride semiconductor layers, wherein at least said quantum well layer at the proximate side in said active layer to said n-type nitride semiconductor layers is doped with an n-type impurity and wherein at least said quantum well layer at the proximate side in said active layer to said p-type nitride semiconductor layers is not doped with an n-type impurity.
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19. A nitride semiconductor emitting device which comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1−
- xN (0<
x<
1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn at a range of 5×
1016 to 2×
1018/cm3, and the other layers are not doped with an n-type impurity. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
- xN (0<
-
32. A nitride semiconductor device which comprises an active layer comprising quantum well layers and barrier layers, n-type nitride semiconductor layers and p-type nitride semiconductor layers, said active layer being between said n-type nitride semiconductor layers and said p-type nitride semiconductor layers,
wherein a thickness of each of said quantum well layers is not less than 10 Å - and not more than 100 Å and
a thickness of each of said barrier layers is 70 to 500 Å
,a total number of said quantum well layers and said barrier layers is 9 to 15, in which at most 4 layers from a side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5×
1016 to 2×
1018/cm3,the other layers of said quantum well layers and barrier layers are not doped with an n-type impurity and wherein said quantum well layers comprise InxGa1-xN (0<
x<
1) and said barrier layers comprise InyGa1-yN (0≦
y<
1), wherein y<
x. - View Dependent Claims (33, 34, 35, 36)
- and not more than 100 Å and
-
37. A nitride semiconductor device which comprises an active layer comprising quantum well layers and barrier layers, n-type nitride semiconductor layers and p-type nitride semiconductor layers, said active layer being between said n-type nitride semiconductor layers and said p-type nitride semiconductor layers,
wherein a thickness of each of said quantum well layers is not less than 10 Å - and not more than 100 Å and
a thickness of each of said barrier layers is 70 to 500 Å anda total number of said quantum well layers and said barrier layers is 9 to 15, in which at most 4 layers from a side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5×
1016 to 2×
1018/cm3, and the other layers of said quantum well layers and barrier layers are not doped with an n-type impurity andwherein an overall thickness of said active layer is 500 to 5000 Å
. - View Dependent Claims (38, 39, 40, 41, 42, 43)
- and not more than 100 Å and
Specification