Program temperature dependent read
First Claim
1. A method of operating non-volatile storage, comprising:
- verifying one or more program operations of a group of non-volatile storage elements in the non-volatile storage;
storing an indication of temperature at which the verifying was performed; and
reading the group of non-volatile storage elements using compensation that depends on the temperature at which the verifying was performed, including applying compensation that is independent of temperature dependence of the non-volatile storage elements threshold voltages.
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Accused Products
Abstract
Methods and non-volatile storage systems are provided for using compensation that depends on the temperature at which the memory cells were programmed. Note that the read level compensation may have a component that is not dependent on the memory cells'"'"' Tco. That is, the component is not necessarily based on the temperature dependence of the Vth of the memory cells. The compensation may have a component that is dependent on the difference in width of individual Vth distributions of the different states across different temperatures of program verify. This compensation may be used for both verify and read, although a different amount of compensation may be used during read than during verify.
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Citations
30 Claims
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1. A method of operating non-volatile storage, comprising:
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verifying one or more program operations of a group of non-volatile storage elements in the non-volatile storage; storing an indication of temperature at which the verifying was performed; and reading the group of non-volatile storage elements using compensation that depends on the temperature at which the verifying was performed, including applying compensation that is independent of temperature dependence of the non-volatile storage elements threshold voltages. - View Dependent Claims (8, 23)
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2. A method of operating non-volatile storage, comprising:
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verifying one or more program operations of a group of non-volatile storage elements in the non-volatile storage, including applying different amounts of compensation to verify respective different states of a plurality of states to which the group of non-volatile storage elements are programmed, the different amounts of compensation shift a first verify level for a higher state more than a second verify level for a lower state, with increasing verify temperature; storing an indication of temperature at which the verifying was performed; and reading the group of non-volatile storage elements using compensation that depends on the temperature at which the verifying was performed. - View Dependent Claims (3, 4, 24)
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5. A method of operating non-volatile storage, comprising:
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verifying one or more program operations of a group of non-volatile storage elements in the non-volatile storage, including—
applying one or more first compensations for temperature dependence of the group of non-volatile storage elements threshold voltage and one or more second compensations that are independent of temperature dependence of the group of non-volatile storage elements threshold voltage;storing an indication of temperature at which the verifying was performed; and reading the group of non-volatile storage elements using compensation that depends on the temperature at which the verifying was performed. - View Dependent Claims (6, 7, 25)
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9. A non-volatile storage device comprising:
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a plurality of non-volatile storage elements; a plurality of word lines, a first of the word lines is associated with a group of the plurality of non-volatile storage elements; one or more management circuits in communication with the plurality of non-volatile storage elements and the plurality of word lines, the one or more management circuits verify one or more program operations of the group of non-volatile storage elements, the one or more management circuits store an indication of temperature at which the verify was performed, the one or more management circuits read the group of non-volatile storage elements using compensation that depends on the temperature at which the verify was performed, wherein the compensation that depends on the temperature at which the verify was performed compensates for temperature dependence of threshold voltage distribution widths of the non-volatile storage elements threshold voltages. - View Dependent Claims (26)
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10. A non-volatile storage device comprising:
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a plurality of non-volatile storage elements; a plurality of word lines, a first of the word lines is associated with a group of the plurality of non-volatile storage elements; one or more management circuits in communication with the plurality of non-volatile storage elements and the plurality of word lines, the one or more management circuits verify one or more program operations of the group of non-volatile storage elements, the one or more management circuits apply different amounts of compensation to verify respective different states of a plurality of states to which the group of non-volatile storage elements are programmed, the different amounts of compensation shift a first verify level for a higher state more than a second verify level for a lower state, with increasing verify temperature, the one or more management circuits store an indication of temperature at which the verify was performed, the one or more management circuits read the group of non-volatile storage elements using compensation that depends on the temperature at which the verify was performed. - View Dependent Claims (11, 12, 27)
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13. A method of operating non-volatile storage, comprising:
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programming a group of non-volatile storage elements, the programming including performing one or more verify operations using compensation that is based on the equation;
Tco_prog1*Tprog+Tco*Tprog,where Tprog is the temperature during program verify, Tco compensates for Vth temperature dependence of the group of non-volatile storage elements and Tco_prog1 compresses a width of a Vth distribution window of the programmed group of non-volatile storage elements with increasing temperature; storing an indication of temperature at which the verifying was performed; and reading the group of non-volatile storage elements using compensation that is based on the equation;
Tco_prog2*Tprog+Tco*Tread,where Tread is the temperature during read and Tco_prog2 adjusts read levels to compensate for an effect caused by Tco_prog1 during program verify. - View Dependent Claims (14, 15, 16, 17, 28)
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18. A non-volatile storage device comprising:
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a plurality of non-volatile storage elements; a plurality of word lines, a first of the word lines is associated with a group of the plurality of non-volatile storage elements; one or more management circuits in communication with the plurality of non-volatile storage elements and the plurality of word lines, the one or more management circuits program the group of non-volatile storage elements, the one or more management circuits perform one or more verify operations during the programming using verify reference voltages that are based on the equation;
Tco_prog1*Tprog+Tco*Tprog, where Tprog is the temperature during program verify, Tco compensates for Vth temperature dependence of the group of non-volatile storage elements and Tco_prog1 reduces gaps between states of the programmed group of non-volatile storage elements with increasing temperature, the one or more management circuits store an indication of temperature at which the verifying was performed, the one or more management circuits read the group of non-volatile storage elements using compensation that is based on the equation;
Tco_prog2*Tprog+Tco*Tread, where Tread is the temperature during read and Tco_prog2 adjusts read reference voltages to compensate for an effect to the width of the threshold voltage distribution window caused by Tco_prog1 during program verify. - View Dependent Claims (29)
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19. A method of operating non-volatile storage, comprising:
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programming a group of non-volatile storage elements to a plurality of data states at a first temperature, the programming includes verifying the plurality of data states using a first set of verify levels; and programming the group of non-volatile storage elements to the plurality of data states at a second temperature, the programming includes verifying the plurality of data states using a second set of verify levels, the first set and the second set of verify levels compensate for temperature dependence of individual threshold distribution widths of the plurality of data states. - View Dependent Claims (20, 21, 22, 30)
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Specification