Electrode structures for LEDs with increased active area
First Claim
1. An electrode structure for an LED, the electrode structure comprising:
- a semiconductor material having a cutout formed therein;
an electrically insulating porous dielectric material;
a metal electrode;
at least one pair of dielectric layers configured so as to define a DBR structure and disposed between a portion of the metal electrode and a portion of the dielectric material, wherein each pair of dielectric layers of the DBR structure is substantially optically transmissive, is comprised of layers of materials of different indices of refraction, and is a multiple of approximately ¼
λ
thick; and
wherein a portion of the electrode is formed outside of the cutout and a portion of the electrode is formed inside of the cutout,wherein the portion of the electrode outside the cutout is electrically isolated from the semiconductor material by the dielectric material, andwherein the portion of the electrode inside the cutout is in electrical contact with the semiconductor material.
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Accused Products
Abstract
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.
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Citations
44 Claims
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1. An electrode structure for an LED, the electrode structure comprising:
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a semiconductor material having a cutout formed therein; an electrically insulating porous dielectric material; a metal electrode; at least one pair of dielectric layers configured so as to define a DBR structure and disposed between a portion of the metal electrode and a portion of the dielectric material, wherein each pair of dielectric layers of the DBR structure is substantially optically transmissive, is comprised of layers of materials of different indices of refraction, and is a multiple of approximately ¼
λ
thick; andwherein a portion of the electrode is formed outside of the cutout and a portion of the electrode is formed inside of the cutout, wherein the portion of the electrode outside the cutout is electrically isolated from the semiconductor material by the dielectric material, and wherein the portion of the electrode inside the cutout is in electrical contact with the semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An electrode structure for an LED, the electrode structure comprising:
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a semiconductor material having a cutout formed therein; an electrically insulating porous dielectric material layer comprising ITO; and a metal electrode, wherein a portion of the electrode is formed outside of the cutout and a portion of the electrode is formed inside of the cutout, the portion of the electrode outside the cutout is electrically isolated from the semiconductor material by the dielectric material layer, and the portion of the electrode inside the cutout is in electrical contact with the semiconductor material. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An electrode structure for an LED emitting a light having a center wavelength of λ
- , the electrode structure comprising;
an optically transmissive layer including a dielectric layer and formed on a p-type gallium nitride semiconductor layer, the optically transmissive layer further including a porous ITO layer as an ohmic contact layer for the p-type gallium nitride semiconductor layer; and a metal p-electrode formed on the dielectric layer, the metal p-electrode having a wiring bond pad portion and an extension portion extending from the wiring bond pad portion, wherein the dielectric layer has an index of refraction greater than or equal to one and less than that of the p-type gallium nitride semiconductor layer and has a thickness greater than ½
λ
, andwherein the metal p-electrode partially covers the dielectric layer in a top view so that the dielectric layer is formed out of outline of the wiring bond pad portion of the metal p-electrode in the top view. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
- , the electrode structure comprising;
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30. An electrode structure for a light emitting device, the electrode structure comprising:
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a semiconductor layer having a cutout formed therein; an electrically insulating dielectric layer disposed on the semiconductor layer; a metal electrode disposed on a first portion of the electrically insulating dielectric layer; at least one pair of dielectric layers configured so as to define a DBR structure and disposed between the metal electrode and the first portion of the electrically insulating dielectric layer, wherein each pair of dielectric layers of the DBR structure is substantially optically transmissive, and is comprised of layers of materials of different indices of refraction; and wherein a portion of the metal electrode is disposed outside of the cutout and a portion of the metal electrode is disposed inside of the cutout, wherein the portion of the metal electrode outside the cutout is electrically isolated from the semiconductor layer by the first portion of the electrically insulating dielectric layer, and wherein the portion of the metal electrode inside the cutout is in electrical contact with the semiconductor layer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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Specification