Display device using semiconductor light emitting device and method of fabricating the same

• US RE46,985 E1
• Filed: 07/18/2017
• Issued: 08/07/2018
• Est. Priority Date: 08/21/2012
• Status: Active Grant

• Current Assignee: LG Electronics, Inc. (LG Corporation)
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Rhee, Byungjoon
• Primary Examiner(s): MCKANE, ELIZABETH L
• Application Number:
  US15/653,147
• Time in Patent Office: 385 Days
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05K 1/0274 Optical details, e.g. printed circuits comprising integral optical means H05K1/0269 takes precedence; coupling light guides with opto-electronic components G02B6/42
• CPC Class Codes: H05K 1/189 characterised by the use of a flexible or folded printed circuit H05K3/326 takes precedence
• CPC Class Codes: H05K 2201/10106 Light emitting diode [LED]
• CPC Class Codes: H05K 2201/10128 Display
• CPC Class Codes: H05K 3/323 by applying an anisotropic conductive adhesive layer over an array of pads
• CPC Class Codes: H05K 3/4682 Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil

Abstract

A display device using a semiconductor light emitting device and a method of fabricating the semiconductor light emitting device are disclosed. The display device includes a substrate, a plurality of first electrodes disposed on the substrate, an anisotropic conductive film disposed on the substrate provided with the first electrodes, a plurality of semiconductor light emitting devices disposed on the anisotropic conductive film layer, electrically connected to the first electrodes, and constituting individual pixels, and a plurality of second electrodes disposed between the semiconductor light emitting devices and electrically connected to the semiconductor light emitting devices. Thus, alignment of the semiconductor light emitting device array may be simplified by use of an anisotropic conductive film Due to excellent brightness, the semiconductor light emitting devices, which are small in size, may form individual sub-pixels. In addition, the distance between the semiconductor light emitting devices is sufficiently long to embody a flexible display device.

Claims

1. A display device using a semiconductor light emitting device comprising:

a substrate;

a plurality of first electrodes disposed on the substrate;

a plurality of semiconductor light emitting devices constituting individual pixels;

an anisotropic conductive film layer disposed on the substrate provided with the plurality of first electrodes, and electrically connecting the plurality of semiconductor light emitting devices with the first electrodes;

a plurality of semiconductor light emitting devices disposed on the anisotropic conductive film layer, electrically connected to the plurality of first electrodes, and constituting individual pixels;

a plurality of second electrodes disposed between the plurality of semiconductor light emitting devices and electrically connected to the plurality of semiconductor light emitting devices; and

a wavelength converting layer disposed on the plurality of semiconductor light emitting devices, wherein;

red, green, and blue sub-pixels constitute a one pixel or red, green, blue, and white sub-pixels constitute a one pixel,

the plurality of semiconductor light emitting devices are blue semiconductor light emitting devices,

the wavelength converting layer includes red portions having a red fluorescent (phosphor) material and green portions having a green fluorescent (phosphor) material,

the red portions and the green portions are bar-shaped portions extending in a direction parallel to the plurality of first electrodes, and

the red portions and the green portions are alternately disposed in a direction parallel to the plurality of second electrodes.

2. The display device according to claim 1, wherein:

the plurality of semiconductor light emitting devices are aligned in plural rows; and

the plurality of second electrodes are disposed between the plural rows of the plurality of semiconductor light emitting devices.

3. The display device according to claim 2, wherein the plurality of first electrodes and the plurality of second electrodes comprise bar-shaped electrodes.

4. The display device according to claim 1, wherein the plurality of second electrodes are electrically connected to the plurality of semiconductor light emitting devices via connection electrodes protruding from the plurality of second electrodes.

5. The display device according to claim 1, wherein the plurality of first electrodes and the plurality of second electrodes are aligned to be perpendicular to each other.

6. The display device according to claim 1, wherein each of the plurality of semiconductor light emitting devices has one side having a length of 50 μ

m or less.

7. The display device according to claim 1, wherein further comprising:

a barrier wall is further disposed between the plurality of semiconductor light emitting devices.

8. The display device according to claim 7, wherein the barrier wall comprises a black or white insulating material.

9. The display device according to claim 1, wherein the wavelength converting layer further comprises a black matrix disposed between the red and green fluorescent (phosphor) materials.

10. The display device according to claim 1, wherein the wavelength converting layer further comprises a yellow fluorescent (phosphor) material constituting individual pixels.

11. The display device according to claim 1, further comprising thin film transistors comprising a source region, a drain region, and a gate electrode disposed between the source and drain regions and disposed between the substrate and the plurality of first electrodes.

12. The display device according to claim 11, further comprising an interlayer insulating layer disposed on the substrate to cover the thin film transistors.

13. The display device according to claim 12, wherein the plurality of first electrodes are electrically connected to the thin film transistors via through-hole electrodes penetrating the interlayer insulating layer.