Polycrystalline group III metal nitride with getter and method of making
First Claim
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1. A method of preparing a polycrystalline group III metal nitride material, comprising:
- providing a source material selected from a group III metal , a group III metal halide, or a combination thereof into a chamber, the source material comprising at least one metal selected from at least aluminum, gallium, and indium;
providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the source material, wherein the getter is provided to the chamber via a vapor phase;
transferring a nitrogen-containing material into the chamber;
heating the chamber to a determined temperature;
pressurizing the chamber to a determined pressure;
processing the nitrogen-containing material with the source material in the chamber; and
forming a polycrystalline group III metal nitride material.
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Abstract
A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.
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Citations
33 Claims
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1. A method of preparing a polycrystalline group III metal nitride material, comprising:
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providing a source material selected from a group III metal , a group III metal halide, or a combination thereof into a chamber, the source material comprising at least one metal selected from at least aluminum, gallium, and indium; providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the source material, wherein the getter is provided to the chamber via a vapor phase; transferring a nitrogen-containing material into the chamber; heating the chamber to a determined temperature; pressurizing the chamber to a determined pressure; processing the nitrogen-containing material with the source material in the chamber; and forming a polycrystalline group III metal nitride material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of forming a polycrystalline gallium-containing group III metal nitride material, comprising:
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providing a gallium-containing group III metal or a group III metal halide source material to a chamber, the gallium-containing group III metal or metal halide source material comprising at least one metal selected from aluminum, gallium, and indium; providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the source material; transferring a nitrogen-containing material into the chamber; heating the chamber to a determined temperature; pressurizing the chamber to a determined pressure; processing the nitrogen-containing material with the source material in the chamber to form a polycrystalline gallium-containing group III metal nitride material comprising a plurality of grains of a crystalline gallium-containing group III metal nitride; the plurality of grains having an average grain size in a range from about 10nanometers 10 nanometers to about 10 millimeters and defining a plurality of grain boundaries; and the polycrystalline gallium-containing group III metal nitride material having; an atomic fraction of a gallium-containing group III metal in a range from about 0.49 to about 0.55, the gallium-containing group III metal being selected from at least one of aluminum, indium, and gallium; and an oxygen content in the form of a gallium-containing group III metal oxide or a substitutional impurity within the polycrystalline gallium-containing group III metal nitride material less than about 10 parts per million (ppm); and a plurality of inclusions within at least one of the plurality of grain boundaries and the plurality of grains, the plurality of inclusions comprising a getter, the getter constituting a distinct phase from the crystalline gallium-containing group III metal nitride and located within individual grains of the crystalline gallium-containing group III metal nitride and/or at the grain boundaries of the crystalline gallium-containing group III metal nitride and being incorporated into the polycrystalline gallium-containing group III metal nitride at a level greater than about 200 parts per million,;
and;forming a crystalline gallium-containing group III metal nitride crystal from the polycrystalline gallium-containing group III metal nitride material characterized by a wurtzite structure substantially free from any cubic entities and an optical absorption coefficient less than or equal to about 2 cm−
1 at wavelengths between about 405 nanometers and about 750nanometers 750 nanometers. - View Dependent Claims (23)
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24. A method of preparing a group III metal nitride crystal, comprising:
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providing a source material selected from a group III metal, a group III metal halide, or a combination thereof into a chamber, the source material comprising at least one metal selected from at least aluminum, gallium, or indium; providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the source material, wherein the getter is provided to the chamber via a vapor phase; adding a nitrogen-containing material into the chamber; processing the nitrogen-containing material with the source material in the chamber to form a polycrystalline group III metal nitride material by heating the chamber to a predetermined temperature; introducing the polycrystalline group III metal nitride along with ammonia and a mineralizer into a container; and heating the container to process the polycrystalline group III metal nitride in supercritical ammonia to etch away at least a portion of the polycrystalline group III metal nitride and recrystallize said at least a portion as the group III metal nitride crystal. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A method of preparing a group III metal nitride crystal, comprising:
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providing a source material selected from a group III metal, a group III metal halide, or a combination thereof into a chamber, the source material comprising at least one metal selected from at least aluminum, gallium, or indium; providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the source material, wherein the getter is provided to the chamber via a vapor phase; transferring a nitrogen-containing material into the chamber; processing the nitrogen-containing material with the source material in the chamber to form a polycrystalline group III metal nitride material by heating the chamber to a determined temperature; and using the polycrystalline group III nitride material as a source material for flux growth of at least one group III metal nitride crystal.
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32. A method of forming a gallium-containing group III metal nitride crystal, comprising:
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providing a gallium-containing group III metal or a group III metal halide source material to a chamber, the gallium-containing group III metal or metal halide source material comprising at least one metal selected from aluminum, gallium, and indium; providing a getter at a level of at least 100 ppm with respect to the source material into the chamber such that the getter contacts the source material; adding a nitrogen-containing material into the chamber; processing the nitrogen-containing material with the source material in the chamber to form a polycrystalline gallium-containing group III metal nitride material comprising a plurality of grains of a crystalline gallium-containing group III metal nitride by heating the chamber to a predetermined temperature, the plurality of grains having an average grain size in a range from about 10 nanometers to about 10 millimeters and defining a plurality of grain boundaries; and the polycrystalline gallium-containing group III metal nitride material having; an atomic fraction of a gallium-containing group III metal in a range from about 0.49 to about 0.55, the gallium-containing group III metal being selected from at least one of aluminum, indium, and gallium; and an oxygen content in the form of a gallium-containing group III metal oxide or a substitutional impurity within the polycrystalline gallium-containing group III metal nitride material less than about 10 parts per million (ppm); and a plurality of inclusions within at least one of the plurality of grain boundaries and the plurality of grains, the plurality of inclusions comprising a getter, the getter constituting a distinct phase from the crystalline gallium-containing group III metal nitride and located within individual grains of the crystalline gallium-containing group III metal nitride and/or at the grain boundaries of the crystalline gallium-containing group III metal nitride and being incorporated into the polycrystalline gallium-containing group III metal nitride at a level greater than about 200 parts per million; introducing the polycrystalline gallium-containing group III metal nitride along with ammonia and a mineralizer into a container; and heating the container to process the polycrystalline gallium-containing group III metal nitride in supercritical ammonia to etch away at least a portion of the polycrystalline group III metal nitride and recrystallize said at least a portion as the gallium-containing group III metal nitride crystal. - View Dependent Claims (33)
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Specification