MOS semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate of a first conductive type;
a first semiconductor layer of the first conductive type formed on a main surface of said semiconductor substrate, an impurity concentration of said first semiconductor layer being lower than that of said semiconductor substrate;
second and third semiconductor layers of a second conductive type formed on said first semiconductor layer;
a first MOS transistor of the first conductive type including first source regions formed in said second semiconductor layer, said first semiconductor layer and said semiconductor substrate serving as drains of said first MOS transistor;
a first metal layer electrically connected to said first source regionsa second MOS transistor of the first conductive type including second source regions;
formed in said third semiconductor layer, said first semiconductor layer and said semiconductor substrate serving as drains of said second MOS transistor;
a second metal layer electrically connected to said second source regions, said second metal layer being isolated from said first metal layer; and
a conductive layer formed on a reverse surface of said semiconductor substrate;
wherein the conductive layer forms a current flow path from the first MOS transistor to the second MOS transistor.
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Abstract
The semiconductor device according to an aspect of the present invention includes: a semiconductor substrate of a first conductive type; a first semiconductor layer of the first conductive type formed on the main surface of the semiconductor substrate, the impurity concentration of the first semiconductor layer being lower than that of the semiconductor substrate; a second and third semiconductor layers of a second conductive type formed on the first semiconductor layer, the second and third semiconductor layers being isolated from each other; a first and second MOS transistors MOS1 and MOS2 of the first conductive type formed in the second and third semiconductor layers, the first semiconductor layer and the semiconductor substrate serving as drains of the first and second MOS transistors; and a conductive layer.
6 Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate of a first conductive type; a first semiconductor layer of the first conductive type formed on a main surface of said semiconductor substrate, an impurity concentration of said first semiconductor layer being lower than that of said semiconductor substrate; second and third semiconductor layers of a second conductive type formed on said first semiconductor layer; a first MOS transistor of the first conductive type including first source regions formed in said second semiconductor layer, said first semiconductor layer and said semiconductor substrate serving as drains of said first MOS transistor; a first metal layer electrically connected to said first source regions a second MOS transistor of the first conductive type including second source regions;
formed in said third semiconductor layer, said first semiconductor layer and said semiconductor substrate serving as drains of said second MOS transistor;a second metal layer electrically connected to said second source regions, said second metal layer being isolated from said first metal layer; and a conductive layer formed on a reverse surface of said semiconductor substrate; wherein the conductive layer forms a current flow path from the first MOS transistor to the second MOS transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a semiconductor substrate of a first conductive type having a main surface and a reverse surface; a first semiconductor layer of the first conductive type formed on the main surface of said semiconductor substrate, an impurity concentration of said first semiconductor layer being lower than that of said semiconductor substrate; second and third semiconductor layers of a second conductive type formed on said first semiconductor layer; a first MOS transistor of the first conductive type including first source regions formed in said second semiconductor layer, said first semiconductor layer and said semiconductor substrate serving as drains of said first MOS transistor; a first metal layer electrically connected to said first source regions a second MOS transistor of the first conductive type including second source regions formed in said third semiconductor layer, said first semiconductor layer and said semiconductor substrate serving as drains of said second MOS transistor, said second and third semiconductor layers being adjacent to each other on the first semiconductor layer; a second metal layer electrically connected to said second source regions, said second metal layer being isolated from said first metal layer; and a conductive layer formed on the reverse surface of said semiconductor substrate. - View Dependent Claims (18, 19, 20)
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Specification