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White light devices using non-polar or semipolar gallium containing materials and phosphors

  • US RE47,711 E1
  • Filed: 10/14/2015
  • Issued: 11/05/2019
  • Est. Priority Date: 08/04/2008
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a substrate member comprising a first surface region;

    one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on comprising a semipolar or nonpolar bulk GaN containing device substrate and light emitting layers, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting said light emitting diode device being configured to emit substantially polarized emission of one or more first wavelengths;

    an optically transparent member coupled to the one or more light emitting diode devices;

    an optical path provided between the one or more light emitting diode devices and the optically transparent member; and

    and a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths such that said light emitting device emits polarized and non-polarized light;

    wherein the bulk gallium nitride substrate has a dislocation density in the plane of the large-area surface that is less than 5×

    106 cm

    2
    .

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