Method for manufacturing oxide semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming an insulating film over a substrate;
forming an insulating metal oxide film over the insulating film;
after forming the insulating metal oxide film, performing a first heat treatment;
after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; and
after forming the oxide semiconductor film, performing a second heat treatment,wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film,wherein the second heat treatment is performed lower than or equal to 450°
C.,wherein the first heat treatment is performed at a temperature lower than the second heat treatment, andwherein oxygen is supplied from the insulating film to the oxide semiconductor film through the insulating metal oxide film by performing the second heat treatment.
0 Assignments
0 Petitions
Accused Products
Abstract
The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.
165 Citations
38 Claims
-
1. A method for manufacturing a semiconductor device comprising:
-
forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; and after forming the oxide semiconductor film, performing a second heat treatment, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, wherein the second heat treatment is performed lower than or equal to 450°
C.,wherein the first heat treatment is performed at a temperature lower than the second heat treatment, and wherein oxygen is supplied from the insulating film to the oxide semiconductor film through the insulating metal oxide film by performing the second heat treatment. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for manufacturing a semiconductor device comprising:
-
forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; and after forming the oxide semiconductor film, performing a second heat treatment, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, wherein the first heat treatment is performed higher than or equal to 250°
C. and lower than or equal to 350°
C.,wherein the second heat treatment is performed lower than or equal to 450°
C.,wherein the first heat treatment is performed at a temperature lower than the second heat treatment, and wherein oxygen is supplied from the insulating film to the oxide semiconductor film through the insulating metal oxide film by performing the second heat treatment. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
-
15. A method for manufacturing a semiconductor device comprising:
-
forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment;
forming an oxide semiconductor film over the insulating metal oxide film;after forming the oxide semiconductor film, performing a second heat treatment; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode over the gate insulating film, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, wherein the first heat treatment is performed higher than or equal to 250°
C. and lower than or equal to 350°
C.,wherein the second heat treatment is performed lower than or equal to 450°
C.,wherein the first heat treatment is performed at a temperature lower than the second heat treatment, and wherein oxygen is supplied from the insulating film to the oxide semiconductor film through the insulating metal oxide film by performing the second heat treatment. - View Dependent Claims (16, 17, 18, 19, 20, 21)
-
-
22. A method for manufacturing a semiconductor device comprising:
-
forming an insulating film over a substrate; forming an insulating metal oxide film over the insulating film; after forming the insulating metal oxide film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the insulating metal oxide film; and after forming the oxide semiconductor film, performing a second heat treatment, wherein an oxygen diffusion coefficient of the insulating metal oxide film is smaller than that of the insulating film, wherein the second heat treatment is performed lower than or equal to 450°
C., andwherein the first heat treatment is performed at a temperature lower than the second heat treatment. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
-
-
31. A method for manufacturing a semiconductor device comprising:
-
forming an insulating film over a substrate; forming an oxide insulating film over the insulating film; after forming the oxide insulating film, performing a first heat treatment; after performing the first heat treatment, forming an oxide semiconductor film over the oxide insulating film; and after forming the oxide semiconductor film, performing a second heat treatment, wherein an oxygen diffusion coefficient of the oxide insulating film is smaller than that of the insulating film, wherein the second heat treatment is performed lower than or equal to 450°
C., andwherein the first heat treatment is performed at a temperature lower than the second heat treatment. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38)
-
Specification