Semiconductor device

  • US 10,020,309 B2
  • Filed: 12/29/2016
  • Issued: 07/10/2018
  • Est. Priority Date: 02/19/2010
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising a circuit, the circuit comprising:

  • a first transistor comprising;

    a first semiconductor layer;

    a first gate insulating layer over the first semiconductor layer;

    a first gate electrode over the first gate insulating layer; and

    a third gate electrode under the first semiconductor layer;

    an insulating layer over the first semiconductor layer; and

    a second transistor comprising a second semiconductor layer over the insulating layer,wherein each of the first semiconductor layer and the second semiconductor layer includes an oxide semiconductor.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×