Semiconductor device with power elements and current detection portion

• US 10,027,250 B2
• Filed: 06/26/2015
• Issued: 07/17/2018
• Est. Priority Date: 07/03/2014
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Nomura, Kousuke, Takashima, Masaki
• Primary Examiner(s): Ahmed, Yusef A
• Application Number:
  US15/320,343
• Publication Number:
  US 20170155341A1
• Time in Patent Office: 1,117 Days
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 25/07 the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H02M 1/0009 Devices or circuits for detecting current in a converter
• CPC Class Codes: H02M 1/08 Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/537 using semiconductor devices only, e.g. single switched pulse inverters

Abstract

A semiconductor device includes: power elements that configures an inverter; a conductive plate that electrically connects the power elements; and a current detection portion. The power elements include a first power element and a second power element. The conductive plate includes: a first carrying portion; a second carrying portion; a third carrying portion; a fourth carrying portion; a first connection portion that electrically connects the second carrying portion and the third carrying portion to connect the first power element and the second power element in series; and an output terminal electrically connected with the second carrying portion or the third carrying portion. The first carrying portion is connected with a first power source and the fourth carrying portion is connected with a second power source. The current detection portion is fixed to the output terminal and the magnetic field permeates the current detection portion.

Claims

1. A semiconductor device comprising:

a plurality of power elements that configures an inverter;

a conductive plate that electrically connects the plurality of power elements; and

a current detection portion that detects a current of the plurality of power elements based on a magnetic field generated by a flow of a current input to the plurality of power elements and a current output from the plurality of power elements,

wherein;

the plurality of power elements at least include a first power element and a second power element;

the conductive plate includes;

a first carrying portion to which a first end of the first power element is connected;

a second carrying portion to which a first end of the second power element is connected;

a third carrying portion to which a second end of the first power element is connected;

a fourth carrying portion to which a second end of the second power element is connected;

a first connection portion that electrically connects the second carrying portion and the third carrying portion to connect the first power element and the second power element in series; and

an output terminal electrically connected with the second carrying portion or the third carrying portion;

the first carrying portion is connected with a first power source and the fourth carrying portion is connected with a second power source; and

the current detection portion is fixed to the output terminal and the magnetic field generated by the flow of the current of the output terminal permeates the current detection portion, wherein

when three planes in parallel with each other are defined as a first plane, a second plane, and a third plane, and also when the third plane is located between the first plane and the second plane,

the first carrying portion and the second carrying portion are positioned in the first plane;

the third carrying portion and the fourth carrying portion are positioned in the second plane;

the first power element and the second power element are positioned in the third plane; and

the first connection portion extends from the second carrying portion to the third carrying portion while crossing the third plane, wherein

the current detection portion is positioned between the first plane and the second plane,

the output terminal includes a fifth carrying portion to which the current detection portion is fixed, and a second connection portion that connects the second carrying portion or the third carrying portion with the fifth carrying portion; and

the fifth carrying portion is positioned in an area out of a facing area between the first carrying portion and the third carrying portion, and a facing area between the second carrying portion and the fourth carrying portion,

the semiconductor device further comprising;

a shield that prevents a permeation of an electromagnetic noise into the current detection portion, the electromagnetic noise being output from the first power element and the second power element,

wherein;

the shield includes a flat first shield portion positioned in the first plane, and a flat second shield portion positioned in the second plane, the first shield portion and the second shield portion both being connected with a ground; and

a main surface of the first shield portion and a main surface of the second shield portion face each other via the current detection portion and the fifth carrying portion.

2. The semiconductor device according to claim 1, further comprising:

a magnetic collection core that collects a magnetic field generated by the flow of the current of the output terminal,

wherein;

the magnetic field of the output terminal collected by the magnetic collection core permeates the current detection portion.

3. The semiconductor device according to claim 1, wherein:

the current detection portion includes a magneto-electric conversion unit that converts a magnetic field into an electric signal, and a calculation unit that calculates a current of the first power element and the second power element based on the electric signal output from the magneto-electric conversion element.

4. A semiconductor device comprising:

a plurality of power elements that configures an inverter;

a conductive plate that electrically connects the plurality of power elements; and

a current detection portion that detects a current of the plurality of power elements based on a magnetic field generated by a flow of a current input to the plurality of power elements and a current output from the plurality of power elements,

wherein;

the plurality of power elements at least include a first power element and a second power element;

the conductive plate includes;

a first carrying portion to which a first end of the first power element is connected;

a second carrying portion to which a first end of the second power element is connected;

a third carrying portion to which a second end of the first power element is connected;

a fourth carrying portion to which a second end of the second power element is connected;

a first connection portion that electrically connects the second carrying portion and the third carrying portion to connect the first power element and the second power element in series; and

an output terminal electrically connected with the second carrying portion or the third carrying portion;

the first carrying portion is connected with a first power source and the fourth carrying portion is connected with a second power source; and

the current detection portion is fixed to the output terminal and the magnetic field generated by the flow of the current of the output terminal permeates the current detection portion, wherein

when three planes in parallel with each other are defined as a first plane, a second plane, and a third plane, and also when the third plane is located between the first plane and the second plane,

the first carrying portion and the fourth carrying portion are positioned in the first plane;

the second carrying portion and the third carrying portion are positioned in the second plane;

the first power element and the second power element are positioned in the third plane; and

the first connection portion extends from the second carrying portion to the third carrying portion along the second plane, wherein

the current detection portion is positioned between the first plane and the second plane,

the output terminal includes a fifth carrying portion to which the current detection portion is fixed, and a second connection portion that connects the second carrying portion or the third carrying portion with the fifth carrying portion; and

the fifth carrying portion is positioned in an area out of a facing area between the first carrying portion and the third carrying portion, and a facing area between the second carrying portion and the fourth carrying portion,

the semiconductor device further comprising;

a shield that prevents a permeation of an electromagnetic noise into the current detection portion, the electromagnetic noise being output from the first power element and the second power element,

wherein;

the shield includes a flat first shield portion positioned in the first plane, and a flat second shield portion positioned in the second plane, the first shield portion and the second shield portion both being connected with a ground; and

a main surface of the first shield portion and a main surface of the second shield portion face each other via the current detection portion and the fifth carrying portion.

5. A semiconductor device comprising:

a plurality of power elements that configures an inverter;

a conductive plate that electrically connects the plurality of power elements; and

a current detection portion that detects a current of the plurality of power elements based on a magnetic field generated by a flow of a current input to the plurality of power elements and a current output from the plurality of power elements,

wherein;

the plurality of power elements at least include a first power element and a second power element;

the conductive plate includes;

a first carrying portion to which a first end of the first power element is connected;

a second carrying portion to which a first end of the second power element is connected;

a third carrying portion to which a second end of the first power element is connected;

a fourth carrying portion to which a second end of the second power element is connected;

a first connection portion that electrically connects the second carrying portion and the third carrying portion to connect the first power element and the second power element in series; and

an output terminal electrically connected with the second carrying portion or the third carrying portion;

the first carrying portion is connected with a first power source and the fourth carrying portion is connected with a second power source; and

the current detection portion is fixed to the output terminal and the magnetic field generated by the flow of the current of the output terminal permeates the current detection portion, wherein

the output terminal includes a fifth carrying portion to which the current detection portion is fixed, and a second connection portion that connects the second carrying portion or the third carrying portion with the fifth carrying portion; and

the fifth carrying portion is positioned in an area out of a facing area between the first carrying portion and the third carrying portion, and a facing area between the second carrying portion and the fourth carrying portion,

the semiconductor device further comprising;

a shield that prevents a permeation of an electromagnetic noise into the current detection portion, the electromagnetic noise being output from the first power element and the second power element,

wherein;

the shield includes a flat first shield portion positioned in the first plane, and a flat second shield portion positioned in the second plane, the first shield portion and the second shield portion both being connected with a ground; and

a main surface of the first shield portion and a main surface of the second shield portion face each other via the current detection portion and the fifth carrying portion.