Connection control method

  • US 10,032,611 B2
  • Filed: 12/27/2016
  • Issued: 07/24/2018
  • Est. Priority Date: 03/31/2011
  • Status: Active Grant
First Claim
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1. A connection control method in a substrate processing apparatus comprising:

  • a depressurized processing room;

    a mounting table that is provided in the processing room and configured to mount a substrate thereon;

    a first high frequency power supply configured to apply a high frequency voltage for plasma generation;

    a second high frequency power supply configured to apply a high frequency voltage for bias voltage generation to the mounting table; and

    a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the mounting table, the connection control method comprising;

    controlling connection or disconnection, by a first switch that is not connected to a ground but connected to the second high frequency power supply, between the mounting table and the second high frequency power supply and connection or disconnection, by a second switch that applies the DC voltage to the mounting table so as to change an energy distribution of ions attracted to the mounting table, between the mounting table and the DC voltage applying unit when plasma is generated in the processing room.

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