Semiconductor substrate with a single protruding portion with multiple different widths and insulation thickness
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate having a main surface;
a protruding portion that is a portion of the semiconductor substrate, protrudes from the main surface, has widths in a first direction of the main surface, and extends in a second direction orthogonal to the first direction;
a first gate electrode that is arranged on the protruding portion via a first insulating film and extends in the first direction;
a second gate electrode that is arranged on the protruding portion via a second insulating film and extends in the first direction;
a third insulating film that is positioned between the first gate electrode and the second gate electrode; and
a first semiconductor region and a second semiconductor region that are formed in the protruding portion so as to sandwich the first gate electrode and the second gate electrode,wherein a film thickness of the second insulating film is larger than a film thickness of the first insulating film, anda first width of the protruding portion in a region overlapped with the second gate electrode is smaller than a second width of the protruding portion in a region overlapped with the first gate electrode.
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Abstract
A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction. Further, a width of the fin in a region in which the memory gate electrode is arranged via the second gate insulating film having a film thickness larger than the first gate insulating film is smaller than a width of the fin in a region in which the control gate electrode is arranged via the first gate insulating film.
27 Citations
17 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a main surface; a protruding portion that is a portion of the semiconductor substrate, protrudes from the main surface, has widths in a first direction of the main surface, and extends in a second direction orthogonal to the first direction; a first gate electrode that is arranged on the protruding portion via a first insulating film and extends in the first direction; a second gate electrode that is arranged on the protruding portion via a second insulating film and extends in the first direction; a third insulating film that is positioned between the first gate electrode and the second gate electrode; and a first semiconductor region and a second semiconductor region that are formed in the protruding portion so as to sandwich the first gate electrode and the second gate electrode, wherein a film thickness of the second insulating film is larger than a film thickness of the first insulating film, and a first width of the protruding portion in a region overlapped with the second gate electrode is smaller than a second width of the protruding portion in a region overlapped with the first gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a semiconductor substrate having a main surface; a first protruding portion that is a portion of the semiconductor substrate in a first area of the main surface, protrudes from the main surface, has widths in a first direction of the main surface, and extends in a second direction orthogonal to the first direction; a second protruding portion that is a portion of the semiconductor substrate in a second area different from the first area, protrudes from the main surface, has a width in the first direction of the main surface, and extends in the second direction orthogonal to the first direction; a first gate electrode that is arranged on the first protruding portion via a first insulating film and extends in the first direction; a second gate electrode that is arranged on the second protruding portion via a second insulating film and extends in the first direction; a third gate electrode that is arranged on the first protruding portion via a third insulating film and extends in the first direction; a first semiconductor region and a second semiconductor region that are formed in the first protruding portion so as to sandwich the first gate electrode and the third gate electrode; and a third semiconductor region and a fourth semiconductor region that are formed in the second protruding portion so as to sandwich the second gate electrode, wherein a film thickness of the first insulating film is larger than a film thickness of the third insulating film, a first width of the first protruding portion in a first region overlapped with the first gate electrode is larger than a second width of the second protruding portion in a second region overlapped with the second gate electrode, and a third width of the first protruding portion in a third region overlapped with the third gate electrode is larger than the first width. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification