Light emitting diode chip

• US 10,043,958 B2
• Filed: 01/10/2017
• Issued: 08/07/2018
• Est. Priority Date: 08/31/2011
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Perzlmaier, Korbinian, Gehrke, Kai, Walter, Robert, Engl, Karl, Weiss, Guido, Maute, Markus, Rammelsberger, Stefanie
• Primary Examiner(s): Smoot, Stephen W
• Assistant Examiner(s): Ivanov, Pavel
• Application Number:
  US15/402,689
• Publication Number:
  US 20170148962A1
• Time in Patent Office: 574 Days
• Field of Search: 257 98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Claims

1. A light emitting diode chip comprising a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein

the light emitting diode chip has a radiation exit area at a front side,

the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area relative to the active layer, said mirror layer being a single layer and containing silver,

a protective layer is arranged on the mirror layer,

the protective layer comprises a transparent conductive oxide,

the mirror layer directly adjoins the semiconductor layer sequence at an interface of the mirror layer situated opposite to the protective layer, relative to the mirror layer,

the light emitting diode chip comprises a first electrical connection layer and a second electrical connection layer,

the first electrical connection layer and the second electrical connection layer face the rear side of the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer, and

a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

2. The light emitting diode chip according to claim 1, wherein the protective layer comprises ZnO, ZnO:

Ga, ZnO;

Al, ITO, IZO or IGZO.

3. The light emitting diode chip according to claim 1, wherein the protective layer has a thickness of 5 nm to 500 nm.

4. The light emitting diode chip according to claim 3, wherein the protective layer has a thickness of 10 nm to 100 nm.

5. The light emitting diode chip according to claim 1, wherein side flanks of the mirror layer and/or of the protective layer are covered by an electrically insulating layer at least in regions.

6. The light emitting diode chip according to claim 5, wherein the electrically insulating layer is an oxide or nitride layer.

7. The light emitting diode chip according to claim 1, wherein the first electrical connection layer is arranged at an opposite side of the protective layer relative to the mirror layer.

8. The light emitting diode chip according to claim 7, wherein the first electrical connection layer is formed from a plurality of partial layers.

9. The light emitting diode chip according to claim 8, wherein the partial layers comprise, proceeding from the mirror layer, a platinum layer, a gold layer and a titanium layer.

10. The light emitting diode chip according to claim 1, wherein a region of the semiconductor layer sequence which adjoins the mirror layer is a p-type semiconductor region.

11. The light emitting diode chip according to claim 1, wherein the light emitting diode chip connects to a carrier at an opposite side relative to the semiconductor layer sequence as viewed from the mirror layer.

12. The light emitting diode chip according to claim 1, wherein the light emitting diode chip comprises no growth substrate.

13. A light emitting diode chip comprising a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein

the light emitting diode chip has a radiation exit area at a front side,

the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area relative to the active layer, said mirror layer is a silver layer directly adjoining the semiconductor layer sequence,

a protective layer is arranged on the mirror layer,

the protective layer comprises a transparent conductive oxide,

the mirror layer directly adjoins the semiconductor layer sequence at an interface of the mirror layer situated opposite to the protective layer, relative to the mirror layer,

the light emitting diode chip comprises a first electrical connection layer and a second electrical connection layer,

the first electrical connection layer and the second electrical connection layer face the rear side of the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer, and

a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.