Impedance control in radio-frequency switches

  • US 10,056,901 B2
  • Filed: 02/10/2017
  • Issued: 08/21/2018
  • Est. Priority Date: 02/11/2016
  • Status: Active Grant
First Claim
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1. A radio-frequency switch comprising:

  • a first field-effect transistor disposed between a first node and a second node, the first field-effect transistor having a source, a drain, a gate, and a body;

    a coupling path connected between the body of the first field-effect transistor and the gate of the first field-effect transistor, the coupling path including a diode; and

    an adjustable impedance network connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.

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